B5817WS

B5817WS-B5819WS Schottky Barrier Diode FEATURES z Extremely low VF z Low stored change,majority carrier conduction z Low power loss/high efficient Pb Lead-free APPLICATIONS z For Use In Low Voltage, High Frequency Inverters z Free Wheeling, And Polarity Protection Applications SOD-323 ORDERING INFORMATION Type No. Marking B5817WS B5818WS B5819WS SJ SK SL Package Code SOD-323 SOD-323 SOD-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter symbol B5817WS B5818WS B5819WS Unit Non-Repetitive Peak reverse voltage VRM 20 30 40 V Peak repetitive Peak reverse voltage VRRM Working Peak Reverse voltage VRWM 20 30 40 V DC Reverse Voltage VR RMS Reverse Voltage VR(RMS) 14 21 28 V Average Rectified output Current Io 1 A Peak forward surge current@=8.3ms IFSM 20 A Power Dissipation Pd 235 mW Thermal Resistance Junction to Ambient RθJA 426 ℃/W Storage temperature TSTG -55 to +150 ℃ B5817WS-B5819WS Schottky Barrier Diode ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Reverse breakdown voltage Symbol Test Condition IR=1mA V(BR) Reverse voltage leakage current IR Forward voltage Diode capacitance VF CD VR=20V VR=30V VR=40V B5817WS B5818WS B5819WS VR=4V,f=1MHz MIN MAX UNIT B5817WS B5818WS B5819WS B5817WS B5818WS B5819WS IF=1A IF=3A IF=1A IF=3A IF=1A IF=3A 20 30 40 V 1 mA 0.45 0.75 0.55 0.875 0.6 0.9 120 V pF TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified B5817WS-B5819WS Sch...