B5817WS-B5819WS
Schottky Barrier Diode
FEATURES
z Extremely low VF z Low stored change,majority carrier
conduction
z L...
B5817WS-B5819WS
Schottky Barrier Diode
FEATURES
z Extremely low VF z Low stored change,majority carrier
conduction
z Low power loss/high efficient
Pb
Lead-free
APPLICATIONS
z For Use In Low Voltage, High Frequency Inverters z Free Wheeling, And Polarity Protection Applications
SOD-323
ORDERING INFORMATION
Type No.
Marking
B5817WS B5818WS B5819WS
SJ SK SL
Package Code
SOD-323 SOD-323 SOD-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Parameter
symbol B5817WS B5818WS B5819WS Unit
Non-Repetitive Peak reverse voltage
VRM
20
30
40
V
Peak repetitive Peak reverse voltage
VRRM
Working Peak Reverse voltage
VRWM
20
30
40
V
DC Reverse Voltage
VR
RMS Reverse Voltage
VR(RMS)
14
21
28
V
Average Rectified output Current
Io 1
A
Peak forward surge current@=8.3ms
IFSM
20
A
Power Dissipation
Pd 235
mW
Thermal Resistance Junction to Ambient RθJA
426
℃/W
Storage temperature
TSTG
-55 to +150
℃
B5817WS-B5819WS
Schottky Barrier Diode
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Reverse breakdown voltage
Symbol Test Condition IR=1mA
V(BR)
Reverse voltage leakage current IR
Forward voltage Diode capacitance
VF CD
VR=20V VR=30V VR=40V B5817WS
B5818WS
B5819WS
VR=4V,f=1MHz
MIN MAX UNIT
B5817WS B5818WS B5819WS B5817WS B5818WS B5819WS IF=1A IF=3A IF=1A IF=3A IF=1A IF=3A
20 30 40
V
1 mA
0.45 0.75 0.55 0.875 0.6 0.9 120
V pF
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
B5817WS-B5819WS Sch...