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3.0SMCJ9.0A Dataheets PDF



Part Number 3.0SMCJ9.0A
Manufacturers Taiwan Semiconductor
Logo Taiwan Semiconductor
Description Surface Mount Transient Voltage Suppressor
Datasheet 3.0SMCJ9.0A Datasheet3.0SMCJ9.0A Datasheet (PDF)

3.0SMCJ SERIES Surface Mount Transient Voltage Suppressor Features For surface mounted application Low profile package Built-in strain relief Glass passivated junction Excellent clamping capability Fast response time: Typically less than 1.0ps from 0 volt to BV min. Typical IR less than 1μA above 10V High temperature soldering guaranteed: 260OC / 10 seconds at terminals Plastic material used carries Underwriters Laboratory Flammability Classification 94V-0 3000 watts peak pulse power capabilit.

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3.0SMCJ SERIES Surface Mount Transient Voltage Suppressor Features For surface mounted application Low profile package Built-in strain relief Glass passivated junction Excellent clamping capability Fast response time: Typically less than 1.0ps from 0 volt to BV min. Typical IR less than 1μA above 10V High temperature soldering guaranteed: 260OC / 10 seconds at terminals Plastic material used carries Underwriters Laboratory Flammability Classification 94V-0 3000 watts peak pulse power capability with a 10 X 1000 us waveform by 0.01% duty cycle Voltage Range 5.0 to 170 Volts 3000 Watts Peak Power SMC/DO-214AB .129(3.27) .118(3.0) .245(6.22) .220(5.59) .103(2.62) .079(2.00) .280(7.11) .260(6.60) .012(.31) .006(.15) Mechanical Data Case: Molded plastic Terminals: Solder plated Polarity: Indicated by cathode band Standard packaging: 16mm tape (EIA STD RS-481) Weight: 0.21gram .060(1.52) .030(0.76) .008(.20) .004(.10) .320(8.13) .305(7.75) Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics Rating at 25℃ambient temperature unless otherwise specified. Type Number Peak Power Dissipation at TA=25OC, Tp=1ms (Note 1) Symbol PPK Value Minimum 3000 Units Watts Steady State Power Dissipation Pd 5 Watts Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method) (Note 2, 3) - Unidirectional Only IFSM 200 Amps Maximum Instantaneous Forward Voltage at 100.0A for Unidirectional Only (Note 4) VF 3.5 / 5.0 Operating and Storage Temperature Range TJ, TSTG -55 to + 150 Notes: 1. Non-repetitive Current Pulse Per Fig. 3 and Derated above TA=25OC Per Fig. 2. 2. Mounted on 8.0mm2 (.013mm Thick) Copper Pads to Each Terminal. Volts OC 3. 8.3ms Single Half Sine-wave or Equivalent Square Wave, Duty Cycle=4 Pulses Per Minute Maximum. 4. VF=3.5V on 3.0SMCJ5.0 thru 3.0SMCJ90 Devices and VF=5.0V on 3.0SMCJ100 thru 3.0SMCJ170 Devices. Devices for Bipolar Applications 1. For Bidrectional Use C or CA Suffix for Types 3.0SMCJ5.0 through Types 3.0SMCJ170. 2. Electrical Characteristics Apply in Both Directions. - 612 - Pppm, PEAK PULSE POWER, KW lppm, PEAK PULSE CURRENT % IRSM PEAK PULSE POWER (Pppm) or CURRENT (lpp) DERATING IN PERCENTAGE, % RATINGS AND CHARACTERISTIC CURVES (3.0SMCJ SERIES) FIG.1- PEAK PULSE POWER RATING CURVE 100 NON-REPETITIVE PULSE WAVEFORM SHOWN in FIG. 3 TA=250C 10 FIG.2- PULSE DERATING CURVE 100 75 50 1 25 0.31X0.31" (8.0X8.0mm) COPPER PAD AREAS 0.1 0.1 s 1.0 s 10 s 100 s td. PULSE WIDTH, sec. 1.0ms 10ms FIG.3- PULSE WAVEFORM 150 PULSE WIDTH (td) is DEFINED tr=10 sec. AS THE POINT WHERE THE PEAK CURRENT DECAYS to 50% of lppm PEAK VALUE 100 lppm HALF VALUE- lpp 2 50 10/1000 sec. WAVEFORM AS DEFINED BY R.E.A. 0 0 25 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE. OC FIG.4- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 200 8.3ms Single Half Sine Wave JEDEC Method 100 UNIDIRECTIONAL ONLY PEAK FORWARD SURGE CURRENT. (A) td 0 0 1.0 2.0 t, TIME, ms 3.0 FIG.5- TYPICAL JUNCTION CAPACITANCE 10000 BIDIRECTIONAL Tj=250C f=1.0MHz Vsig=50mVp-p MEASURED AT ZERO BIAS 1000 MEASURED AT STAND-OFF VOLTAGE,VWM 100 10 4.0 1 10 NUMBER OF CYCLES AT 60Hz FIG.6- TYPICAL JUNCTION CAPACITANCE 20000 10000 Tj=250C f=1.0MHz Vsig=50mVp-p MEASURED AT ZERO BIAS 1000 VR MEASURED AT STAND-OFF VOLTAGE,VWM 100 100 Cj, JUNCTION CAPACITANCE, pF Cj, JUNCTION CAPACITANCE, pF 10 1 10 100 400 VWM, REVERSE STAND-OFF VOLTAGE. (V) 10 1 10 100 400 VWM, REVERSE STAND-OFF VOLTAGE. (V) - 613 - ELECTRICAL CHARACTERISTICS (TA=25OC unless otherwise noted) Device Type Device Modified Marking "J" Bend Lead Code 3.0SMCJ5.0 3.0SMCJ5.0A HDD HDE Breakdown Voltage V(BR) (Volts) (Note 1) (MIN / MAX) 6.40 / 7.3 6.40 / 7.0 Test Current at IT(mA) 10 10 Stand-off voltage VWM(Volts) 5.0 5.0 Maximum Reverse Leakage at VWM (Note 3) ID(uA) 1000 1000 Maximum Peak Pulse Surge Current IPPM (Note 2) (Amps) 312.5 326.0 Maximum Clamping Voltage at IPPM VC(Volts) 9.6 9.2 3.0SMCJ6.0 3.0SMCJ6.0A HDF HDG 6.67 / 8.15 6.67 / 7.37 10 10 6.0 6.0 1000 1000 263.2 291.3 11.4 10.3 3.0SMCJ6.5 3.0SMCJ6.5A HDH HDK 7.22 / 8.82 7.22 / 7.98 10 10 6.5 6.5 500 500 243.9 267.9 12.3 11.2 3.0SMCJ7.0 3.0SMCJ7.0A HDL HDM 7.78 / 9.51 7.78 / 8.60 10 10 7.0 7.0 200 200 225.6 250.0 13.3 12.0 3.0SMCJ7.5 3.0SMCJ7.5A HDN HDP 8.33 / 10.2 8.33 / 9.21 1.0 1.0 7.5 7.5 100 100 209.8 232.6 14.3 12.9 3.0SMCJ8.0 HDQ 8.89 / 10.9 1.0 8.0 50 200.0 15.0 3.0SMCJ8.0A 3.0SMCJ8.5 HDR HDS 8.89 / 9.83 9.44 / 11.5 1.0 1.0 8.0 8.5 50 25 220.6 188.6 13.6 15.9 3.0SMCJ8.5A 3.0SMCJ9.0 HDT HDU 9.44 / 10.4 10.0 / 12.2 1.0 1.0 8.5 9.0 25 10 208.4 177.4 14.4 16.9 3.0SMCJ9.0A 3.0SMCJ10 HDV HDW 10.0 / 11.1 11.1 / 13.6 1.0 1.0 9.0 10 10 5.0 194.8 159.6 15.4 18.8 3.0SMCJ10A HDX 11.1 / 12.3 1.0 10 5.0 176.4 17.0 3.0SMCJ11 HDY 12.2 / 14.9 1.0 11 5.0 149.2 20.1 3.0SMCJ11A HDZ 12.2 / 13.5 1.0 11 5.0 164.8 .


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