RB551V-30

RB551V-30 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE Features Small surface mounting type Ultra low VF High reliability Applications High frequency rectification switching regulation PINNING PIN 1 2 DESCRIPTION Cathode Anode 12 SA Top View Marking Code: "SA" Simplified outline SOD-323 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Peak Reverse Voltage DC Reverse Voltage Mean Rectifying Current Peak Forward Surge Current (60 Hz for 1 Cyc.) Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 100 mA at IF = 500 mA Reverse Current at VR = 20 V Note: ESD sensitive product handling required. Symbol VRM VR IO IFSM Tj Ts Value 30 20 0.5 2 125 - 40 to + 125 Unit V V A A OC OC Symbol VF IR Max. 0.36 0.47 100 Unit V µA SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 01/09/2006 RB551V-30 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 01/09/2006 RB551V-30 PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-323 A E bp c HE DA UNIT A bp C D E HE mm 1.10 0.80 0.40 0.25 0.15 1.80 0.00 1.60 1.35 2.80 1.15 2.30 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)...