Zener Diode. BZT52B3V6 Datasheet

BZT52B3V6 Diode. Datasheet pdf. Equivalent


Taiwan Semiconductor BZT52B3V6
Small Signal Product
BZT52B2V4 - BZT52B75
Taiwan Semiconductor
500mW, 2% Tolerance SMD Zener Diode
FEATURES
- Wide zener voltage range selection : 2.4V to 75V
- Surface mount device type
- Moisture sensitivity level 1
- Pb free and RoHS compliant
- VZ Tolerance Selection of ±2%
- Matte tin (Sn) lead finish with Nickel (Ni) under plate
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
SOD-123F
MECHANICAL DATA
- Case: Flat lead SOD-123 small outline plastic package
- Terminal: Matte tin plated, lead free, solderable
per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed: 260°C/10s
- Polarity: Indicated by cathode band
- Weight : 8.85 ± 0.5mg
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Forward voltage
@ IF = 10mA
VF
Power dissipation
PD
Thermal resistance from junction to ambient
(Note 1)
RθJA
Junction temperature
TJ
Storage temperature
TSTG
Notes: 1. Valid provided that electrodes are kept at ambient temperature
1
500
350
150
- 65 to +150
UNIT
V
mW
°C/W
°C
°C
ZENER I vs. V CHARACTERISTICS
VBR : Voltage at IZK
IZK : Test current for voltage VBR
ZZK : Dynamic impedance at IZK
IZT : Test current for voltage VZ
VZ : Voltage at current IZT
ZZT : Dynamic impedance at IZT
IZM : Maximum steady state current
VZM : Voltage at IZM
Document Number: DS_S1405026
Version: F15


BZT52B3V6 Datasheet
Recommendation BZT52B3V6 Datasheet
Part BZT52B3V6
Description SMD Zener Diode
Feature BZT52B3V6; Small Signal Product BZT52B2V4 - BZT52B75 Taiwan Semiconductor 500mW, 2% Tolerance SMD Zener Diode .
Manufacture Taiwan Semiconductor
Datasheet
Download BZT52B3V6 Datasheet




Taiwan Semiconductor BZT52B3V6
Small Signal Product
BZT52B2V4 - BZT52B75
Taiwan Semiconductor
ELECTRICAL CHARACTERISTICS
(Ratings at TA=25°C ambient temperature unless otherwise specified,
and VF Forward Voltage = 1V Maximum @ IF = 10 mA for all part numbers)
Device
type
Marking
code
Min (V)
Zener voltage range
VZ @ IZT
Nom (V)
Max (V)
Maximum zener impedance
IZT ZZT @ IZT ZZK @ IZK IZK
mA Ohm mA
BZT52B2V4 2V4B
2.35
2.40
2.45
5
100 564
1
BZT52B2V7 2V7B
2.65
2.70
2.75
5
100 564
1
BZT52B3V0 3V0B
2.94
3.00
3.06
5
100 564
1
BZT52B3V3 3V3B
3.23
3.30
3.37
5
95 564
1
BZT52B3V6 3V6B
3.53
3.60
3.67
5
90 564
1
BZT52B3V9 3V9B
3.82
3.90
3.98
5
90 564
1
BZT52B4V3 4V3B
4.21
4.30
4.39
5
90 564
1
BZT52B4V7 4V7B
4.61
4.70
4.79
5
80 470
1
BZT52B5V1 5V1B
5.00
5.10
5.20
5
60 451
1
BZT52B5V6 5V6B
5.49
5.60
5.71
5
40 376
1
BZT52B6V2 6V2B
6.08
6.20
6.32
5
10 141
1
BZT52B6V8 6V8B
6.66
6.80
6.94
5
15 75
1
BZT52B7V5 7V5B
7.35
7.50
7.65
5
15 75
1
BZT52B8V2 8V2B
8.04
8.20
8.36
5
15 75
1
BZT52B9V1 9V1B
8.92
9.10
9.28
5
15 94
1
BZT52B10
10VB
9.80
10.00
10.20
5
20 141
1
BZT52B11
11VB
10.78
11.00
11.22
5
20 141
1
BZT52B12
12VB
11.76
12.00
12.24
5
25 141
1
BZT52B13
13VB
12.74
13.00
13.26
5
30 160
1
BZT52B15
15VB
14.70
15.00
15.30
5
30 188
1
BZT52B16
16VB
15.68
16.00
16.32
5
40 188
1
BZT52B18
18VB
17.64
18.00
18.36
5
45 212
1
BZT52B20
20VB
19.60
20.00
20.40
5
55 212
1
BZT52B22
22VB
21.56
22.00
22.44
5
55 235
1
BZT52B24
24VB
23.52
24.00
24.48
5
70 235
1
BZT52B27
27VB
26.46
27.00
27.54
2
80 282 0.5
BZT52B30
30VB
29.40
30.00
30.60
2
80 282 0.5
BZT52B33
33VB
32.34
33.00
33.66
2
80 306 0.5
BZT52B36
36VB
35.28
36.00
36.72
2
90 329 0.5
BZT52B39
39VB
38.22
39.00
39.78
2
130 329 0.5
BZT52B43
43VB
42.14
43.00
43.86
2
150 353 0.5
BZT52B47
47VB
46.06
47.00
47.94
2
170 353 0.5
BZT52B51
51VB
49.98
51.00
52.02
2
180 376 0.5
BZT52B56
56VB
54.88
56.00
57.12
2
200 400 0.5
BZT52B62
62VB
60.76
62.00
63.24
2
215 423 0.5
BZT52B68
68VB
66.64
68.00
69.36
2
240 447 0.5
BZT52B75
75VB
73.50
75.00
76.50
2
255 470 0.5
Notes1. The Zener Voltage (VZ) is tested under pulse condition of 10ms.
2. The device numbers listed have a standard tolerance on the normal zener voltage of ±2%.
3. For detailed information on price, availability and delivery of normal zener voltages between the voltages
shown and tighter voltage tolerances, contact your nearest Taiwan Semiconductor representative.
4. The Zener impedance is derived from the 60-cycle ac voltage, which results when an ac current
having an RMS value equal to 10% of the dc zener current is superimposed to IZT or IZK.
Maximum reverse
current
IR VR
μA V
45 1
18 1
91
4.5 1
4.5 1
2.7 1
2.7 1
2.7 2.0
1.8 2.0
0.9 2.0
2.7 4.0
1.8 4.0
0.9 5.0
0.63
5.0
0.45
6.0
0.18
7.0
0.09
8.0
0.09
8.0
0.09
8.0
0.045
10.5
0.045
11.2
0.045
12.6
0.045
14.0
0.045
15.4
0.045
16.8
0.045
18.9
0.045
21.0
0.045
23.0
0.045
25.2
0.045
27.3
0.045
30.1
0.045
33.0
0.045
35.7
0.045
39.2
0.045
43.4
0.045
47.6
0.045
52.5
Document Number: DS_S1405026
Version: F15



Taiwan Semiconductor BZT52B3V6
Small Signal Product
RATINGS AND CHARACTERISTICS CURVES
(TA=25°C unless otherwise noted)
Fig. 1 Typical Forward Characteristics
1000
100
10
1
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
Forward Voltage (V)
Fig. 3 Zener Breakdown Characteristics
100
10
1
0.1
0.01
15 25 35 45 55 65 75 85
Zener Voltage (V)
1000
100
10
1
1
Fig. 5 Typical Capacitance
10
Zener Voltage (V)
100
BZT52B2V4 - BZT52B75
Taiwan Semiconductor
Fig. 2 Zener Breakdown Characteristics
100
10
1
0.1
0.01
0 1 2 3 4 5 6 7 8 9 10 11 12
Zener Voltage (V)
500
400
300
200
100
0
0
Fig. 4 Admissible Power Dissipation Curve
50 100 150
Ambient Temperature (oC)
200
1000
100
Fig. 6 Effect of Zener Voltage on Impedence
IZ=5mA
10 IZ=20mA
1
1
10
Zener Voltage (V)
100
Document Number: DS_S1405026
Version: F15







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)