Elektronische Bauelemente
BC857S
PNP Silicon Multi-Chip Transistor
RoHS Compliant Product
* Features
Power dissipatio...
Elektronische Bauelemente
BC857S
PNP Silicon Multi-Chip
Transistor
RoHS Compliant Product
* Features
Power dissipation PCM : 0.3 W (Tamp.= 25OC)
Collector current ICM : -0.2 A
Collector-base voltage V(BR)CBO : -50 V
Operating & Storage junction Temperature
Tj, Tstg : -55OC~ +150 CO
C 1 B2 E2
.055(1.40) .047(1.20)
SOT-363
.026TYP (0.65TYP)
.021REF (0.525)REF
8o 0o
.096(2.45) .085(2.15)
.053(1.35) .045(1.15)
.014(0.35) .006(0.15) .087(2.20) .079(2.00)
.043(1.10) .035(0.90)
.018(0.46) .010(0.26)
.006(0.15) .003(0.08)
.004(0.10) .000(0.00)
.039(1.00) .035(0.90)
Marking : 3C
E 1 B1
C2
Dimensions in inches and (millimeters)
Electrical Characteristics( Tamb=25OC unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
V(BR)CBO
Ic=-10µA, IE=0
Collector-emitter breakdown voltage
V(BR)CEO
Ic=-10mA, IB=0
Emitter-base breakdown voltage Collector cut-off current
V(BR)EBO ICBO
IE=-10µA, IC=0 VCB=-30V, IE=0
DC current gain
hFE VCE=-5V, IC=-2mA
Collector-emitter saturation voltage
VCE(sat) VCE(sat)
IC=-10mA, IB=-0.5mA I C=-100mA, IB=-5mA
Base-emitter voltage Transition frequency
VBE VBE(1)
fT
VCE=-5V, IC=-2mA VCE=-5V, IC=-10mA VCE=-5V, IC=-10mA , f=100MHz
Collector output capacitance Noise figure
Cob VCB=-10V, IE=0, f=1MHz
VCE=-5V, IC=-0.2mA NF F=1kHZ, RS=2K ,BW=200HZ
Note: 1 Short duration test pulse used to minimize self-heating effect.
MIN TYP MAX UNIT
-50 V -45 V -5 V
-15 nA 125 630
-0.3 V -0.65 V -0.6 -0.75 V ...