CS48N80
®
Pb Free Plating Product
CS48N80
Pb
70V,87A N-Channel Trench Process Power MOSFET
General Description
The...
CS48N80
®
Pb Free Plating Product
CS48N80
Pb
70V,87A N-Channel Trench Process Power MOSFET
General Description
The CS48N80 is N-channel MOS Field Effect
Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications.
Features
● VDS=70V;ID=87A@ VGS=10V; RDS(ON)<5.8mΩ @ VGS=10V
● Special Designed for E-Bike Controller Application ● Ultra Low On-Resistance ● High UIS and UIS 100% Test
Application
● 48V E-Bike Controller Applications ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply
CS48N80
(TO-220 HeatSink)
G DS
Schematic Diagram
VDSS = 70V IDSS = 87A RDS(ON) = 5.5mΩ
Table 1. Absolute Maximum Ratings (TA=25℃)
Symbol
Parameter
VDS Drain-Source Voltage (VGS=0V)
VGS Gate-Source Voltage (VDS=0V)
ID (DC) ID (DC) IDM (pluse)
Drain Current (DC) at Tc=25℃ Drain Current (DC) at Tc=100℃ Drain Current-Continuous@ Current-Pulsed (Note 1)
dv/dt
Peak Diode Recovery Voltage
PD Maximum Power Dissipation(Tc=25℃)
Derating Factor EAS Single Pulse Avalanche Energy (Note 2)
TJ,TSTG
Operating Junction and Storage Temperature Range
Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature 2.EAS condition:TJ=25℃,VDD=33V,VG=10V,ID=48A
Rev.05 © 2006 Thinki Semiconductor Co.,Ltd.
Value
70 ±25 87 60.9 348
30 111 0.74 552 -55 To 175
Unit
V V A A A V/ns W W/℃ mJ ℃
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CS48N80
®
T...