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Power MOSFET. CS48N88 Datasheet |
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CS48N88
®
Pb Free Plating Product
CS48N88
Pb
70V,92A N-Channel Trench Process Power MOSFET
General Description
The CS48N88 is N-channel MOS Field Effect Transistor
designed for high current switching applications. Rugged EAS
capability and ultra low RDS(ON) is suitable for PWM, load
switching especially for E-Bike controller applications.
Features
● VDS=70V；ID=92A@ VGS=10V；
RDS(ON)<6.4mΩ @ VGS=10V
● Special Designed for E-Bike Controller Application
● Ultra Low On-Resistance
● High UIS and UIS 100% Test
Application
● 48V E-Bike Controller Applications
● Hard Switched and High Frequency Circuits
● Uninterruptible Power Supply
CS48N88
(TO-220 HeatSink)
G DS
Schematic Diagram
VDS = 70V
ID = 92A
RDS(ON) = 5.3mΩ
Table 1. Absolute Maximum Ratings (TA=25℃)
Symbol
Parameter
VDS Drain-Source Voltage (VGS=0V）
VGS Gate-Source Voltage (VDS=0V)
ID (DC)
ID (DC)
IDM (pluse)
Drain Current (DC) at Tc=25℃
Drain Current (DC) at Tc=100℃
Drain Current-Continuous@ Current-Pulsed (Note 1)
dv/dt
Peak Diode Recovery Voltage
PD Maximum Power Dissipation(Tc=25℃)
Derating Factor
EAS Single Pulse Avalanche Energy (Note 2)
TJ,TSTG
Operating Junction and Storage Temperature Range
Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2.EAS condition:TJ=25℃,VDD=33V,VG=10V,ID=45A
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
Value
70
±25
92
65
368
30
120
0.8
506
-55 To 175
Unit
V
V
A
A
A
V/ns
W
W/℃
mJ
℃
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CS48N88
®
Table 2. Thermal Characteristic
Symbol
Parameter
RJC
Thermal Resistance,Junction-to-Case
Value
1.25
Unit
℃/W
Table 3. Electrical Characteristics (TA=25℃unless otherwise noted)
Symbol
Parameter
Conditions
On/Off States
BVDSS Drain-Source Breakdown Voltage
VGS=0V ID=250μA
IDSS Zero Gate Voltage Drain Current(Tc=25℃)
VDS=68V,VGS=0V
IDSS Zero Gate Voltage Drain Current(Tc=125℃)
VDS=68V,VGS=0V
IGSS Gate-Body Leakage Current
VGS=±25V,VDS=0V
VGS(th) Gate Threshold Voltage
VDS=VGS,ID=250μA
RDS(ON) Drain-Source On-State Resistance
VGS=10V, ID=40A
Dynamic Characteristics
Min
70
2
Typ
5.3
Max
1
10
±100
4
6.4
Unit
V
μA
μA
nA
V
mΩ
gFS Forward Transconductance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Switching Times
VDS=10V,ID=15A
VDS=25V,VGS=0V,
f=1.0MHz
VDS=50V,ID=40A,
VGS=10V
20
4363
515
214
89.3
18.9
37.9
S
pF
pF
pF
nC
nC
nC
td(on)
Turn-on Delay Time
tr Turn-on Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
VDD=30V,ID=2A,RL=15Ω
VGS=10V,RG=2.5Ω
13 nS
15 nS
27 nS
32 nS
Source-Drain Diode Characteristics
ISD Source-Drain Current(Body Diode)
92 A
ISDM Pulsed Source-Drain Current(Body Diode)
VSD Forward On Voltage(Note 1)
trr Reverse Recovery Time(Note 1)
Qrr Reverse Recovery Charge(Note 1)
TJ=25℃,ISD=40A,VGS=0V
TJ=25℃,IF=75A
di/dt=100A/μs
368
0.73 0.95
49
97
A
V
nS
nC
ton Forward Turn-on Time
Intrinsic turn-on time is negligible(turn-on is dominated by LS+LD)
Notes 1.Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 1.5%, RG=25Ω, Starting TJ=25℃
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
Page 2/5
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CS48N88
Test Circuit
1）EAS Test Circuits
2）Gate Charge Test Circuit:
3）Switch Time Test Circuit：
®
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
Page 3/5
http://www.thinkisemi.com/
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