Power MOSFET. DK48N88 Datasheet

DK48N88 MOSFET. Datasheet pdf. Equivalent


Thinki Semiconductor DK48N88
DK48N88
®
Pb Free Plating Product
DK48N88
Pb
N-Channel Trench Process Power MOSFET Transistors
General Description
The DK48N88 is N-channel MOS Field Effect Transistor
designed for high current switching applications. Rugged EAS
capability and ultra low RDS(ON) is suitable for PWM, load
switching especially for E-Bike controller applications.
Features
VDS=70VID=88A@ VGS=10V
RDS(ON)<5.2mΩ @ VGS=10V
Special Designed for E-Bike Controller Application
Ultra Low On-Resistance
High UIS and UIS 100% Test
Application
48V E-Bike Controller Applications
Hard Switched and High Frequency Circuits
Uninterruptible Power Supply
DK48N88
(TO-220 HeatSink)
G DS
Schematic Diagram
VDSS = 70V
IDSS = 88A
RDS(ON) = 4.8mΩ
Table 1. Absolute Maximum Ratings (TA=25)
Symbol
Parameter
VDS Drain-Source Voltage (VGS=0V
VGS Gate-Source Voltage (VDS=0V)
ID (DC)
Drain Current (DC) at Tc=25
ID (DC)
IDM (pluse)
Drain Current (DC) at Tc=100
Drain Current-Continuous@ Current-Pulsed (Note 1)
dv/dt
Peak Diode Recovery Voltage
PD Maximum Power Dissipation(Tc=25)
Derating Factor
EAS Single Pulse Avalanche Energy (Note 2)
TJ,TSTG
Operating Junction and Storage Temperature Range
Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2.EAS condition:TJ=25,VDD=33V,VG=10V,ID=48.5A
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
Value
70
±25
88
85
320
30
145
1.9
590
-55 To 175
Unit
V
V
A
A
A
V/ns
W
W/
mJ
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DK48N88 Datasheet
Recommendation DK48N88 Datasheet
Part DK48N88
Description N-Channel Trench Process Power MOSFET
Feature DK48N88; DK48N88 ® Pb Free Plating Product DK48N88 Pb N-Channel Trench Process Power MOSFET Transistors .
Manufacture Thinki Semiconductor
Datasheet
Download DK48N88 Datasheet




Thinki Semiconductor DK48N88
Table 2. Thermal Characteristic
Symbol
Parameter
RθJC
Thermal Resistance,Junction-to-Case
Value
0.6
Unit
/W
Table 3. Electrical Characteristics (TA=25unless otherwise noted)
Symbol
Parameter
Conditions
On/Off States
BVDSS Drain-Source Breakdown Voltage
VGS=0V ID=250μA
IDSS Zero Gate Voltage Drain Current(Tc=25)
VDS=68V,VGS=0V
IDSS Zero Gate Voltage Drain Current(Tc=125)
VDS=68V,VGS=0V
IGSS Gate-Body Leakage Current
VGS=±25V,VDS=0V
VGS(th) Gate Threshold Voltage
VDS=VGS,ID=250μA
RDS(ON) Drain-Source On-State Resistance
VGS=10V, ID=40A
Dynamic Characteristics
Min
2
Typ
70
4.8
Max
1
1
±100
4
5.2
Unit
V
μA
μA
nA
V
gFS Forward Transconductance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=10V,ID=40A
VDS=25V,VGS=0V,
f=1.0MHz
VDS=30V,ID=30A,
VGS=10V
28
4858
883
486
81
15
22
S
pF
pF
pF
nC
nC
nC
Switching Times
td(on) Turn-on Delay Time
tr Turn-on Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
VDD=30V,ID=2A,RL=15Ω
VGS=10V,RG=2.5Ω
13 nS
15 nS
27 nS
32 nS
Source-Drain Diode Characteristics
ISD Source-Drain Current(Body Diode)
80 A
ISDM Pulsed Source-Drain Current(Body Diode)
VSD Forward On Voltage(Note 1)
trr Reverse Recovery Time(Note 1)
Qrr Reverse Recovery Charge(Note 1)
TJ=25,ISD=40A,VGS=0V
TJ=25,IF=75A
di/dt=100A/μs
320
0.8 0.95
49
97
A
V
nS
nC
ton Forward Turn-on Time
Intrinsic turn-on time is negligible(turn-on is dominated by LS+LD)
Notes 1.Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 1.5%, RG=25Ω, Starting TJ=25
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
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