KN1A01FU

SMD Type PNP Transistors HN1A01FU (KN1A01FU ) Transistors ■ Features ● High voltage and high current ● High hFE: hFE = 120~400 ● Excellent hFE linearity ● Small package (Dual type) ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Base current Collector Power Dissipation Junction Temperature Storage Temperature range Symbol VCBO VCEO VEBO IC IB PC TJ Tstg Rating -50 -50 -5 -150 -30 200 125 -55 to 125 Unit V mA mW ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Collector- base breakdown voltage Collector- emitter breakdown voltage Emitter - base breakdown voltage Collector-base cut-off current Emitter cut-off current Collector-emitter saturation voltage Base - emitter saturation voltage DC current gain Collector output capacitance Transition frequency Symbol Test Conditions VCBO Ic= -100 μA， IE=0 VCEO Ic= -1 mA， IB=0 VEBO IE= -100μA， IC=0 ICBO VCB= -50 V , IE=0 IEBO VEB= -5V , IC=0 VCE(sat) IC=-100 mA, IB=-10mA VBE(sat) IC=-100 mA, IB=-10mA hFE VCE= -6V, IC= -2mA Cob VCB= -10V, IE= 0,f=1MHz fT VCE= -10V, IC= -1mA ■ Classification of hfe Type HN1A01FU-Y Range 120-240 Marking D1Y HN1A01FU-G 200-400 D1G Min Typ Max Unit -50 -50 V -5 -100 -100 nA -0.3 V -1.2 120 400 7 pF 80 MHz www.kexin.com.cn 1 SMD Type PNP Transistors HN1A01FU (KN1A01FU ) ■ Typical Characterisitics Transistors 2 www.kexin.com.cn ...