PNP Transistors. KXA1504 Datasheet

KXA1504 Transistors. Datasheet pdf. Equivalent


Kexin KXA1504
SMD Type
PNP Transistors
KXA1504
Transistors
Features
Collector Power Dissipation: PC=0.5W
Collector Current: IC=-1.5A
1.70 0.1
0.42 0.1
0.46 0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Rating
-40
-25
-5
-1.5
0.5
150
-55 to +150
Unit
V
V
V
A
W
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter on voltage
Base-emitter positive favor voltage
output capacitance
Transition frequency
Marking
Marking
NY
Symbol
Test conditions
VCBO IC= -100μA, IE=0
VCEO IC = -0.1mA, IB=0
VEBO IE= -100μA, IC=0
ICBO VCB= -40 V,IE=0
ICEO VCE= -20V, IB=0
IEBO VEB= -5V, IC=0
VCE= -1V, IC= -100mA
hFE
VCE= -1V, IC = -800mA
VCE(sat) IC=-800mA, IB= -80mA
VBE(sat) IC=-800mA, IB=-80mA
VBE(on) Ic=-1V,VCE=-10mA
VBEF IB=-1A
Cob VCB=-10V,IE =0,f=1MHz
fT VCE= -10V, IC=-50mA
1.Base
2.Collector
3.Emitter
Min Typ Max Unit
-40 V
-25 V
-5 V
-0.1 μA
-0.1 μA
-0.1 μA
160 320
40
-0.5 V
-1.2 V
-1 V
-1.3 V
20 pF
100 MHz
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KXA1504 Datasheet
Recommendation KXA1504 Datasheet
Part KXA1504
Description PNP Transistors
Feature KXA1504; SMD Type PNP Transistors KXA1504 Transistors ■ Features ● Collector Power Dissipation: PC=0.5W ● .
Manufacture Kexin
Datasheet
Download KXA1504 Datasheet




Kexin KXA1504
SMD Type
Transistors
PNP Transistors
Typical Characteristics
-0 .5
-0 .4
-0 .3
KXA1504
IB = -3.0mA
IB = -2.5mA
IB = -2.0mA
-1 000
-1 00
VCE = -1V
-0 .2
-0 .1
0
IB = -1.5mA
IB = -1.0mA
IB = -0.5mA
-0 .4 -0 .8 -1.2 -1.6 -2 .0
VCE[V], COLLECTOR-EMITTER VOLTAGE
-1 0
-1
-0 .1 -1 -10 -100 -1000
IC[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
-10000
-1000
VBE(sat)
IC = 10 IB
-100
-10
VCE = -1V
-100
VCE(sat)
-10
-0.1
-1 -10 -100
IC[mA], COLLECTOR CURRENT
-1000
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
1000
100
IE = 0
f = 1MHz
-1
-0 .1
0.0
-0 .2 -0 .4 -0 .6 -0 .8 -1 .0
VBE[V], BASE-EMITTER VOLTAGE
-1 .2
Figure 4. Base-Emitter On Voltage
1000
100
VCE = -10V
10 10
1
-1 -1 0 -1 00
VCB [V], COLLECTOR-BASE VOLTAGE
Figure 5. Collector Output Capacitance
1
-1
-1 0
-1 00
-4 00
IC[mA], COLLECTOR CURRENT
Figure 6. Current Gain Bandwidth Product
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