PXT2907A

SMD Type PNP Transistors PXT2907A (KXT2907A) Transistors ■ Features ● Switching and Linear Amplification ● High Current and Low Voltage ● Complement to PXT2222A 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -60 V Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -600 mA Collector Power Dissipation PC 500 mW Thermal Resistance From Junction To Ambient RθJA 250 ℃/W Junction Temperature Storage Temperature Range TJ 150 ℃ Tstg -55 to 150 ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Collector- base breakdown voltage VCBO Ic= -1 mA， IE= 0 -60 Collector- emitter breakdown voltage VCEO Ic= -10 mA， IB= 0 -60 Emitter - base breakdown voltage VEBO IE= -1 mA， IC= 0 -5 Collector-base cut-off current ICBO VCB= -50 V , IE= 0 Emitter cut-off current IEBO VEB= -5V , IC=0 Collector-emitter saturation voltage IC=-500 mA, IB=-50mA VCE(sat) IC=-500 mA, IB=-15mA Base - emitter saturation voltage IC=-500 mA, IB=-50mA VBE(sat) IC=-500 mA, IB=-15mA hFE(1) VCE= -10V, IC= -0.1mA 75 hFE(2) VCE= -10V, IC= -1mA 100 DC current gain hFE(3) VCE= -10V, IC= -10mA 100 hFE(4) VCE= -10V, IC= -150mA 100 hFE(5) VCE= -10V, IC= -500mA 50 Delay time td Rise time Storage time tr VCC=-30V, IC=-150mA ts IB1=- IB2= -15mA Fall time tf Transition frequency fT VCE= -10V, IC= -20mA,f=100MHz 200 ■ ...