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HER502G Dataheets PDF



Part Number HER502G
Manufacturers Taiwan Semiconductor
Logo Taiwan Semiconductor
Description Glass Passivated High Efficient Rectifiers
Datasheet HER502G DatasheetHER502G Datasheet (PDF)

HER501G - HER508G 5.0 AMP. Glass Passivated High Efficient Rectifiers DO-201AD Features Glass passivated chip junction. High efficiency, Low VF High current capability High reliability High surge current capability For use in low voltage, high frequency inventor, free wheeling, and polarity protection application. Mechanical Data Cases: Molded plastic Epoxy: UL 94V0 rate flame retardant Lead: Pure tin plated, lead free, solderable per MIL-STD-202, method 208 guaranteed Polarity: Color band deno.

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HER501G - HER508G 5.0 AMP. Glass Passivated High Efficient Rectifiers DO-201AD Features Glass passivated chip junction. High efficiency, Low VF High current capability High reliability High surge current capability For use in low voltage, high frequency inventor, free wheeling, and polarity protection application. Mechanical Data Cases: Molded plastic Epoxy: UL 94V0 rate flame retardant Lead: Pure tin plated, lead free, solderable per MIL-STD-202, method 208 guaranteed Polarity: Color band denotes cathode High temperature soldering guaranteed: 260oC/10 seconds/.375”,(9.5mm) lead lengths at 5 lbs., (2.3kg) tension Weight: 1.65grams Dimensions in inches and (millimeters) Maximum Rating and Electrical Characteristics Rating at 25 oC ambient temperature unless otherwise specified. Single phase, half wave 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Symbol HER HER HER HER HER HER HER HER Units 501G 502G 503G 504G 505G 506G 507G 508G Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage VRRM VRMD VDC 50 100 200 300 400 600 800 1000 V 35 70 140 210 280 420 560 700 V 50 100 200 300 400 600 800 1000 V Maximum Average Forward Rectified Current .375 (9.5mm) lead length @TA = 55 oC I(AV) 5.0 A Peak Forward Surge Current, 8.3 ms single half sine-wave superimposed on rated load (JEDEC method ) IFSM 200 A Maximum Instantaneous Forward Voltage @5.0A VF 1.0 1.3 1.7 V Maximum DC Reverse Current @Ta=25 oC at Rated DC Blocking Voltage @ Ta=125 oC IR 10 uA 200 uA Maximum Reverse Recovery Time ( Note 1 ) Trr 50 75 nS Typical Junction Capacitance ( Note 2 ) Cj 100 65 pF Typical Thermal Resistance RθJA 40 Operating Temperature Range TJ -65 to +150 Storage Temperature Range TSTG -65 to +150 Notes: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A 2. Measured at 1 MHz and applied reverse voltage of 4.0 V D.C. 3. Mount on Cu-Pad Size 16mm x 16mm on P.C.B. oC/W oC oC Version: A06 AVERAGE FORWARD CURRENT. (A) RATINGS AND CHARACTERISTIC CURVES (HER501G THRU HER508G) FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE 6.0 5.0 4.0 3.0 Single Phase 2.0 Half Wave 60Hz Resistive or Inductive Load 1.0 0.375" (9.5mm) Lead Length 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE. (OC) FIG.3- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 175 200 8.3ms Single Half Sine Wave JEDEC Method 150 INSTANTANEOUS REVERSE CURRENT. ( A) FIG.2- TYPICAL REVERSE CHARACTERISTICS 1000 100 Tj=1250C 10 Tj=750C Tj=250C 1 0.1 0 20 40 60 80 100 120 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) 140 PEAK FORWARD SURGE CURRENT. (A) JUNCTION CAPACITANCE.(pF) 100 FIG.5- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 50 100 INSTANTANEOUS FORWARD CURRENT. (A) 0 1 10 50 100 NUMBER OF CYCLES AT 60Hz FIG.4- TYPICAL JUNCTION CAPACITANCE 175 1000 10 HER501G-HER504G HER505G 150 125 100 75 50 25 0 0.1 HERH5E0R65G0~1HGE~RH5E0R85G05G 1 0.1 HER506G-HER508G 0.5 1 2 5 10.


HER501G HER502G HER503G


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