Efficient Rectifiers. HER504G Datasheet

HER504G Rectifiers. Datasheet pdf. Equivalent


Taiwan Semiconductor HER504G
HER501G - HER508G
5.0 AMP. Glass Passivated High Efficient Rectifiers
DO-201AD
Features
Glass passivated chip junction.
High efficiency, Low VF
High current capability
High reliability
High surge current capability
For use in low voltage, high frequency inventor, free
wheeling, and polarity protection application.
Mechanical Data
Cases: Molded plastic
Epoxy: UL 94V0 rate flame retardant
Lead: Pure tin plated, lead free, solderable per
MIL-STD-202, method 208 guaranteed
Polarity: Color band denotes cathode
High temperature soldering guaranteed:
260oC/10 seconds/.375”,(9.5mm) lead
lengths at 5 lbs., (2.3kg) tension
Weight: 1.65grams
Dimensions in inches and (millimeters)
Maximum Rating and Electrical Characteristics
Rating at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol HER HER HER HER HER HER HER HER Units
501G 502G 503G 504G 505G 506G 507G 508G
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
VRRM
VRMD
VDC
50 100 200 300 400 600 800 1000 V
35 70 140 210 280 420 560 700 V
50 100 200 300 400 600 800 1000 V
Maximum Average Forward Rectified
Current .375 (9.5mm) lead length
@TA = 55 oC
I(AV)
5.0 A
Peak Forward Surge Current, 8.3 ms single
half sine-wave superimposed on rated load
(JEDEC method )
IFSM
200 A
Maximum Instantaneous Forward Voltage
@5.0A
VF
1.0
1.3 1.7 V
Maximum DC Reverse Current
@Ta=25 oC at Rated DC Blocking Voltage
@ Ta=125 oC
IR
10 uA
200 uA
Maximum Reverse Recovery Time ( Note 1 )
Trr
50
75 nS
Typical Junction Capacitance ( Note 2 )
Cj
100
65 pF
Typical Thermal Resistance
RθJA
40
Operating Temperature Range
TJ
-65 to +150
Storage Temperature Range
TSTG
-65 to +150
Notes:
1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1 MHz and applied reverse voltage of 4.0 V D.C.
3. Mount on Cu-Pad Size 16mm x 16mm on P.C.B.
oC/W
oC
oC
Version: A06


HER504G Datasheet
Recommendation HER504G Datasheet
Part HER504G
Description Glass Passivated High Efficient Rectifiers
Feature HER504G; HER501G - HER508G 5.0 AMP. Glass Passivated High Efficient Rectifiers DO-201AD Features Glass passi.
Manufacture Taiwan Semiconductor
Datasheet
Download HER504G Datasheet




Taiwan Semiconductor HER504G
RATINGS AND CHARACTERISTIC CURVES (HER501G THRU HER508G)
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
6.0
5.0
4.0
3.0
Single Phase
2.0 Half Wave 60Hz
Resistive or
Inductive Load
1.0
0.375" (9.5mm)
Lead Length
0
0 25 50 75 100 125 150
AMBIENT TEMPERATURE. (OC)
FIG.3- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
175
200
8.3ms Single Half Sine Wave
JEDEC Method
150
FIG.2- TYPICAL REVERSE CHARACTERISTICS
1000
100 Tj=1250C
10
Tj=750C
Tj=250C
1
0.1
0 20 40 60 80 100 120
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
140
100
FIG.5- TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
50 100
0
1 10 50 100
NUMBER OF CYCLES AT 60Hz
FIG.4- TYPICAL JUNCTION CAPACITANCE
175
1000
10
HER501G-HER504G
HER505G
150
125
100
75
50
25
0
0.1
HERH5E0R65G0~1HGE~RH5E0R85G05G
1
0.1
HER506G-HER508G
0.5 1 2
5 10 20 50 100 200 500
REVERSE VOLTAGE. (V)
0.01
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
FORWARD VOLTAGE. (V)
1.6 1.8
FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50
NONINDUCTIVE
10
NONINDUCTIVE
trr
+0.5A
(+)
50Vdc
(approx)
(-)
DUT
OSCILLOSCOPE
NON
(NOTE 1)
INDUCTIVE
(-)
PULSE
GENERATOR
(NOTE 2)
(+)
0
-0.25A
NOTES: 1. Rise Time=7ns max. Input Impedance=
1 megohm 22pf
2. Rise Time=10ns max. Sourse Impedance=
50 ohms
-1.0A
1cm
SET TIME BASE FOR
5/ 10ns/ cm
Version: A06





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