LL103A-LL103C
Small Signal Schottky Diodes
Features
For general purpose applications Metal silicon schottky barrier dev...
LL103A-LL103C
Small Signal
Schottky Diodes
Features
For general purpose applications Metal silicon
schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices,steering,biasing and coupling diodes for fast switching and low logic level applications
Mechanical Data
Case:JEDEC MINI-MELF Polarity: Color band denotes cathode end Weight: Approx. 0.031 gram
VOLTAGE RANGE: 40 -- 20 V CURRENT: 400 mW MINI-MELF
Cathode indification
1 .5 0.1
3.4 +0.3 -0.1
0.4 0.1 Dimensions in millimeters
ABSOLUTE RATINGS(LIMITING VALUES)
Symbols LL103A
LL103B
Peak reverse voltage Pow er dissipation (Infinite Heat Sink) Single cycle surge 60Hz sine w ave Forward continuous current
VRRM Ptot I FSM I(AV)
40
30 4001) 15
200
Junction tenperature
TJ
125
Storage temperature range
TSTG
-55 ---+ 150
1)Valid provided that leads at a distance of 4mm from case are kept at ambient temperature
LL103C 20
UNITS V
mW A mA
ELECTRICAL CHARACTERISTICS
(Ratings at 25 ambient temperature unless otherw ise specified)
Reverse breakdow n voltage
@ IR=50 A LL103A LL103B LL103C
Leakage current @ VR=50V
LL103A,VR=30V
LL103B,VR=20V LL103C,VR=10V
Forw ard voltage drop @ I F=20mA
I F=200mA
Junction capacitance @ VR=0V,f=1MHz
Reverse recovery time @ IF=IR=50mAto200mA,recover to0.1IR
Thermal resistance junction to ambient air
Symbols
VR
IR
VF CJ trr RθJA
Min. 40 30 20 -
-
-
Typ.
-
-
50 10 250
Max.
...