Barrier Diodes. LL103B Datasheet

LL103B Diodes. Datasheet pdf. Equivalent


WEITRON LL103B
Schottky Barrier Diodes
P b Lead(Pb)-Free
Features:
* Small surface mounting type
* High reliability
* Low reverse current and low forward voltage
* Low current rectification and high speed switching
Mechanical Data:
*Case : MINI-MELF Glass Case (SOD-80)
*Polarity: Color Band Denotescathode Band
*Weight : Approx 0.05 gram
MINI-MELF Outline Dimensions
LL103A/B/C
Schottky Barrier Diode
350 mAMPERES
20-40 VOLTS
MINI-MELF
Unit:mm
A
C
MINI MELF
Dim Min
Max
B A 3.30 3.70
B 1.30 1.60
C 0.28 0.50
WEITRON
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24-Feb-06


LL103B Datasheet
Recommendation LL103B Datasheet
Part LL103B
Description Schottky Barrier Diodes
Feature LL103B; Schottky Barrier Diodes P b Lead(Pb)-Free Features: * Small surface mounting type * High reliability.
Manufacture WEITRON
Datasheet
Download LL103B Datasheet




WEITRON LL103B
LL103A/B/C
Maximum Ratings (TA=25°C Unless otherwise noted)
Characteristic
Symbol LL103A
Pepetitive Peak Reverse Voltage
VRRM
40
Repetitive peak forward current
tp ≤ 1s
IFSM
Forward Continuous Current, TA=25 °C
IF
Power dissipation,TA=25°C
Junction ambient
On PC board 50mm×50mm×1.6mm
PD
RθJA
Operating Temperature Range
Strorage Temperature Range
TJ
TSTG
LL103B
30
1.0
350
400
LL103C
20
250
+175
-65 to +175
Unit
V
A
mA
mW
K/W
°C
°C
Electrical Characteristics (TA=25°C Unless otherwise noted)
Characteristic
Symbol Min
Tpy
Forward Voltage
IF = 20mA
IF = 200mA
Rverse Current
VR=30V
LL103A
VR=20V
LL103B
VR=10V
LL103C
VF - -
--
--
IR - -
--
Diode capacitance
VR=VF=0, f=1MHz
CD - 50
Reverse Recovery Time
IF= IR=200mA to 0.1mA IR
Trr - 10
Max
0.37
0.6
5.0
5.0
5.0
-
-
Unit
V
µA
PF
nS
WEITRON
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24-Feb-06



WEITRON LL103B
LL103A/B/C
Typical Characteristics (TA = 25 °C unless otherwise specified)
1000
5
100 4
10 3
12
0.1 1
0.01
0 500 1000
V F – Forward Voltage ( mV )
Fig. 1 Forward Current vs. Forward Voltage
0
0.0 0.5 1.0
1.5
VF – Forward Voltage ( V )
Fig. 2 Forward Current vs. Forward Voltage
50
40 IF=100mA
30
20 IF=200mA
IF=400mA
10
0
0
100 200
Tj – Junction Temperature ( °C )
Fig. 3 Reverse Voltage vs. Junction Temperature
50
40
30
20
10
0
0.001 0.01 0.1 1.0 10 100 1000
tp – Pulse width ( ms )
Fig. 5 Forward Current vs. Pulse width
100
10
1
0 10 20 30 40 50
VR –Reverse Voltage ( V )
Fig. 4 Diode Capacitance vs. Reverse Voltage
1000
TA=125°C
100 TA=100°C
TA=75°C
10
TA=50°C
1 TA=25°C
0.1
0
10 20
30 40 50
VR –Reverse Voltage ( V )
Fig. 6 Reverse Current vs. Reverse Voltage
WEITRON
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24-Feb-06







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