FDMS86181

FDMS86181 N-Channel Shielded Gate PowerTrench® MOSFET FDMS86181 December 2015 N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 124 A, 4.2 mΩ Features „ Shielded Gate MOSFET Technology „ Max rDS(on) = 4.2 mΩ at VGS = 10 V, ID = 44 A „ Max rDS(on) = 12 mΩ at VGS = 6 V, ID = 22 A „ ADD „ 50% lower Qrr than other MOSFET suppliers „ Lowers switching noise/EMI „ MSL1 robust package design „ 100% UIL tested „ RoHS Compliant General Description This N-Channel MV MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with best in class soft body diode. Applications „ Primary DC-DC MOSFET „ Synchronous Rectifier in DC-DC and AC-DC „ Motor Drive „ Solar Top Pin 1 Bottom Pin 1 S S S G Power 56 D D D D S S S G D D D D MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Continuous -Pulsed TC = 25 °C TC = 100 °C TA = 25 °C Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 5) (Note 5) (Note 1a) (Note 4) (Note 3) (Note 1a) Ratings 100 ±20 124 78 44 510 337 125 2.5 -55 to +150 Units V V A mJ W °C RθJC RθJA Thermal Resistance, Junction...