PowerTrench MOSFET. FDMS86181 Datasheet

FDMS86181 Datasheet PDF, Equivalent


Part Number

FDMS86181

Description

N-Channel Shielded Gate PowerTrench MOSFET

Manufacture

Fairchild Semiconductor

Total Page 7 Pages
PDF Download
Download FDMS86181 Datasheet


FDMS86181 Datasheet
FDMS86181
December 2015
N-Channel Shielded Gate PowerTrench® MOSFET
100 V, 124 A, 4.2 mΩ
Features
„ Shielded Gate MOSFET Technology
„ Max rDS(on) = 4.2 mΩ at VGS = 10 V, ID = 44 A
„ Max rDS(on) = 12 mΩ at VGS = 6 V, ID = 22 A
„ ADD
„ 50% lower Qrr than other MOSFET suppliers
„ Lowers switching noise/EMI
„ MSL1 robust package design
„ 100% UIL tested
„ RoHS Compliant
General Description
This N-Channel MV MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench® process that
incorporates Shielded Gate technology. This process has been
optimized to minimise on-state resistance and yet maintain
superior switching performance with best in class soft body
diode.
Applications
„ Primary DC-DC MOSFET
„ Synchronous Rectifier in DC-DC and AC-DC
„ Motor Drive
„ Solar
Top
Pin 1
Bottom
Pin 1
S
S
S
G
Power 56
D
D
D
D
S
S
S
G
D
D
D
D
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
-Continuous
-Pulsed
TC = 25 °C
TC = 100 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 5)
(Note 5)
(Note 1a)
(Note 4)
(Note 3)
(Note 1a)
Ratings
100
±20
124
78
44
510
337
125
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
1.0
50
°C/W
Device Marking
FDMS86181
Device
FDMS86181
Package
Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2015 Fairchild Semiconductor Corporation
FDMS86181 Rev. 1.1
1
www.fairchildsemi.com

FDMS86181 Datasheet
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250 μA, VGS = 0 V
100
V
ID = 250 μA, referenced to 25 °C
60 mV/°C
VDS = 80 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
1 μA
100 nA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA
2.0 3.1 4.0
V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 μA, referenced to 25 °C
-9 mV/°C
VGS = 10 V, ID = 44 A
3.3 4.2
rDS(on)
Static Drain to Source On Resistance
VGS = 6 V, ID = 22 A
5.3 12 mΩ
VGS = 10 V, ID = 44 A, TJ = 125 °C
5.7 7.8
gFS Forward Transconductance
VDS = 10 V, ID = 44 A
116 S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 50 V, VGS = 0 V,
f = 1 MHz
2945 4125 pF
1730 2425 pF
20 40 pF
0.1 1.3 2.6
Ω
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VDD = 50 V, ID = 44 A,
VGS = 10 V, RGEN = 6 Ω
VGS = 0 V to 10 V
VGS = 0 V to 6 V
VDD = 50 V,
ID = 44 A
17 31 ns
9 18 ns
25 40 ns
6 12 ns
42 59 nC
27 38 nC
13 nC
9.3 nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
VGS = 0 V, IS = 2.1 A
VGS = 0 V, IS = 44 A
(Note 2)
(Note 2)
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 20 A, di/dt = 300 A/μs
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 20 A, di/dt = 1000 A/μs
0.7 1.2
0.8 1.3
V
63 101 ns
200 320 nC
100 160
ns
852 1363 nC
Notes:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθCA is determined by the user's board design.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. EAS of 337 mJ is based on starting TJ = 25 °C; N-ch: L = 3 mH, IAS = 15 A, VDD = 100 V, VGS =10 V. 100% test at L = 0.1 mH, IAS = 49 A.
4. Pulsed Id please refer to Fig 11 SOA graph for more details.
5. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro-mechanical application board design.
©2015 Fairchild Semiconductor Corporation
FDMS86181 Rev. 1.1
2
www.fairchildsemi.com


Features Datasheet pdf FDMS86181 N-Channel Shielded Gate PowerT rench® MOSFET FDMS86181 December 201 5 N-Channel Shielded Gate PowerTrench MOSFET 100 V, 124 A, 4.2 mΩ Feature s „ Shielded Gate MOSFET Technology „ Max rDS(on) = 4.2 mΩ at VGS = 10 V, I D = 44 A „ Max rDS(on) = 12 mΩ at VGS = 6 V, ID = 22 A „ ADD „ 50% lower Q rr than other MOSFET suppliers „ Lower s switching noise/EMI „ MSL1 robust pa ckage design „ 100% UIL tested „ RoHS Compliant General Description This N- Channel MV MOSFET is produced using Fai rchild Semiconductor’s advanced Power Trench® process that incorporates Shie lded Gate technology. This process has been optimized to minimise on-state res istance and yet maintain superior switc hing performance with best in class sof t body diode. Applications „ Primary D C-DC MOSFET „ Synchronous Rectifier in DC-DC and AC-DC „ Motor Drive „ Sola r Top Pin 1 Bottom Pin 1 S S S G P ower 56 D D D D S S S G D D D D MOS FET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, .
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