PowerTrench MOSFET. FDMS86181 Datasheet

FDMS86181 MOSFET. Datasheet pdf. Equivalent


Fairchild Semiconductor FDMS86181
FDMS86181
December 2015
N-Channel Shielded Gate PowerTrench® MOSFET
100 V, 124 A, 4.2 mΩ
Features
„ Shielded Gate MOSFET Technology
„ Max rDS(on) = 4.2 mΩ at VGS = 10 V, ID = 44 A
„ Max rDS(on) = 12 mΩ at VGS = 6 V, ID = 22 A
„ ADD
„ 50% lower Qrr than other MOSFET suppliers
„ Lowers switching noise/EMI
„ MSL1 robust package design
„ 100% UIL tested
„ RoHS Compliant
General Description
This N-Channel MV MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench® process that
incorporates Shielded Gate technology. This process has been
optimized to minimise on-state resistance and yet maintain
superior switching performance with best in class soft body
diode.
Applications
„ Primary DC-DC MOSFET
„ Synchronous Rectifier in DC-DC and AC-DC
„ Motor Drive
„ Solar
Top
Pin 1
Bottom
Pin 1
S
S
S
G
Power 56
D
D
D
D
S
S
S
G
D
D
D
D
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
-Continuous
-Pulsed
TC = 25 °C
TC = 100 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 5)
(Note 5)
(Note 1a)
(Note 4)
(Note 3)
(Note 1a)
Ratings
100
±20
124
78
44
510
337
125
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
1.0
50
°C/W
Device Marking
FDMS86181
Device
FDMS86181
Package
Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2015 Fairchild Semiconductor Corporation
FDMS86181 Rev. 1.1
1
www.fairchildsemi.com


FDMS86181 Datasheet
Recommendation FDMS86181 Datasheet
Part FDMS86181
Description N-Channel Shielded Gate PowerTrench MOSFET
Feature FDMS86181; FDMS86181 N-Channel Shielded Gate PowerTrench® MOSFET FDMS86181 December 2015 N-Channel Shielded .
Manufacture Fairchild Semiconductor
Datasheet
Download FDMS86181 Datasheet




Fairchild Semiconductor FDMS86181
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250 μA, VGS = 0 V
100
V
ID = 250 μA, referenced to 25 °C
60 mV/°C
VDS = 80 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
1 μA
100 nA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA
2.0 3.1 4.0
V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 μA, referenced to 25 °C
-9 mV/°C
VGS = 10 V, ID = 44 A
3.3 4.2
rDS(on)
Static Drain to Source On Resistance
VGS = 6 V, ID = 22 A
5.3 12 mΩ
VGS = 10 V, ID = 44 A, TJ = 125 °C
5.7 7.8
gFS Forward Transconductance
VDS = 10 V, ID = 44 A
116 S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 50 V, VGS = 0 V,
f = 1 MHz
2945 4125 pF
1730 2425 pF
20 40 pF
0.1 1.3 2.6
Ω
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VDD = 50 V, ID = 44 A,
VGS = 10 V, RGEN = 6 Ω
VGS = 0 V to 10 V
VGS = 0 V to 6 V
VDD = 50 V,
ID = 44 A
17 31 ns
9 18 ns
25 40 ns
6 12 ns
42 59 nC
27 38 nC
13 nC
9.3 nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
VGS = 0 V, IS = 2.1 A
VGS = 0 V, IS = 44 A
(Note 2)
(Note 2)
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 20 A, di/dt = 300 A/μs
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 20 A, di/dt = 1000 A/μs
0.7 1.2
0.8 1.3
V
63 101 ns
200 320 nC
100 160
ns
852 1363 nC
Notes:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθCA is determined by the user's board design.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. EAS of 337 mJ is based on starting TJ = 25 °C; N-ch: L = 3 mH, IAS = 15 A, VDD = 100 V, VGS =10 V. 100% test at L = 0.1 mH, IAS = 49 A.
4. Pulsed Id please refer to Fig 11 SOA graph for more details.
5. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro-mechanical application board design.
©2015 Fairchild Semiconductor Corporation
FDMS86181 Rev. 1.1
2
www.fairchildsemi.com



Fairchild Semiconductor FDMS86181
Typical Characteristics TJ = 25 °C unless otherwise noted
300
VGS = 10 V
250
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 8 V
200
VGS = 6.5 V
150
VGS = 6 V
100
VGS = 5 V
50
0
0123
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
4
6
VGS = 5 V
VGS = 6 V
4
VGS = 6.5 V
2
VGS = 8 V
PULSE DURATION = 80 μs
VGS = 10 V DUTY CYCLE = 0.5% MAX
0
0 50 100 150 200 250 300
ID, DRAIN CURRENT (A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
2.0
ID = 44 A
1.8 VGS = 10 V
1.6
1.4
1.2
1.0
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On- Resistance
vs Junction Temperature
30
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
25
ID = 44 A
20
15
10
5
0
4
TJ = 125 oC
TJ = 25 oC
56789
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance vs Gate to
Source Voltage
300
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
250
VDS = 5 V
200
150
100
50
0
2
TJ = 150 oC
TJ = 25 oC
TJ = -55 oC
46
VGS, GATE TO SOURCE VOLTAGE (V)
8
300
100 VGS = 0 V
10
1
0.1 TJ = 150 oC
TJ = 25 oC
0.01
0.001
0.0
TJ = -55 oC
0.2 0.4 0.6 0.8 1.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
©2015 Fairchild Semiconductor Corporation
FDMS86181 Rev. 1.1
3
www.fairchildsemi.com







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