MRFE6S9160HR3

Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA, GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier applications. TTIDyrQapfif=cica1lC2So0idn0egmsleA8-,CTPahorruroiteu=rgN3h5-1CW3D)aCMtthsAa.AnPvngee.rl,foBISram-n9ad5nwcCiedDt@hM=A818(.0P22iMlo8Ht8, zSM:yVHnDzc.D, PP=Aa2Rg8in=Vg9o, .l8ts,dB @ 0.01% Probability on CCDF. Power Gain — 21 dB Drain Efficiency — 31% ACPR @ 750 kHz Offset — - 46.8 dBc in 30 kHz Bandwidth Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, 3 dB Overdrive, Designed for Enhanced Ruggedness. Features Characterized with Series Equivalent Large - Signal Impedance Parameters Internally Matched for Ease of Use Qualified Up to a Maximum of 32 VDD Operation Integrated ESD Protection RoHS Compliant In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. Document Number: MRFE6S9160H Rev. 1, 12/2008 MRFE6S9160HR3 MRFE6S9160HSR3 880 MHz, 35 W AVG., 28 V SINGLE N - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 1 NI - 780 MRFE6S9160HR3 CASE 465A - 06, STYLE 1 NI - 780S MRFE6S9160HSR3 Table 1. Maximum Ratings Rating Symbol Value Unit Drain- Source Voltage Gate- Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) Table 2. Thermal Characteristics VDSS VGS Tstg TC TJ - 0.5, +66 - 0.5, +12 - 65 to +150 150 225 ...