Effect Transistors. MRFE6S9160HSR3 Datasheet

MRFE6S9160HSR3 Transistors. Datasheet pdf. Equivalent


Freescale Semiconductor MRFE6S9160HSR3
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for N - CDMA, GSM and GSM EDGE base station applications
with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier
applications.
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@ 0.01% Probability on CCDF.
Power Gain — 21 dB
Drain Efficiency — 31%
ACPR @ 750 kHz Offset — - 46.8 dBc in 30 kHz Bandwidth
Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, 3 dB Overdrive,
Designed for Enhanced Ruggedness.
Features
Characterized with Series Equivalent Large - Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 32 VDD Operation
Integrated ESD Protection
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Document Number: MRFE6S9160H
Rev. 1, 12/2008
MRFE6S9160HR3
MRFE6S9160HSR3
880 MHz, 35 W AVG., 28 V
SINGLE N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRFE6S9160HR3
CASE 465A - 06, STYLE 1
NI - 780S
MRFE6S9160HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain- Source Voltage
Gate- Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature (1,2)
Table 2. Thermal Characteristics
VDSS
VGS
Tstg
TC
TJ
- 0.5, +66
- 0.5, +12
- 65 to +150
150
225
Vdc
Vdc
°C
°C
°C
Characteristic
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 81°C, 160 W CW
Case Temperature 73°C, 35 W CW
RθJC
0.31
0.33
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2007 - 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MRFE6S9160HR3 MRFE6S9160HSR3
1


MRFE6S9160HSR3 Datasheet
Recommendation MRFE6S9160HSR3 Datasheet
Part MRFE6S9160HSR3
Description RF Power Field Effect Transistors
Feature MRFE6S9160HSR3; Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - M.
Manufacture Freescale Semiconductor
Datasheet
Download MRFE6S9160HSR3 Datasheet




Freescale Semiconductor MRFE6S9160HSR3
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1A (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 66 Vdc, VGS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
Gate- Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IDSS
10 μAdc
IDSS
1 μAdc
IGSS
10 μAdc
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 525 μAdc)
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 1200 mAdc)
Fixture Gate Quiescent Voltage (1)
(VDD = 28 Vdc, ID = 1200 mAdc, Measured in Functional Test)
Drain- Source On - Voltage
(VGS = 10 Vdc, ID = 3.6 Adc)
Dynamic Characteristics (2)
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Output Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
VGS(th)
VGS(Q)
VGG(Q)
VDS(on)
1
2.1
0.1
2
3
3.17
0.175
3
4.22
0.3
Vdc
Vdc
Vdc
Vdc
Crss — 2.2 —
Coss — 80.2 —
pF
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1200 mA, Pout = 35 W Avg. N - CDMA, f = 880 MHz,
Single- Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz Offset.
PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain
Gps 20 21 23 dB
Drain Efficiency
ηD 29 31 — %
Adjacent Channel Power Ratio
ACPR
- 46.8
- 45
dBc
Input Return Loss
IRL — - 17 - 9 dB
1. VGG = 19/18 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
schematic.
2. Part is internally matched on input.
(continued)
MRFE6S9160HR3 MRFE6S9160HSR3
2
RF Device Data
Freescale Semiconductor



Freescale Semiconductor MRFE6S9160HSR3
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1200 mA, 865 - 900 MHz Bandwidth
Video Bandwidth @ 160 W PEP Pout where IM3 = - 30 dBc
(Tone Spacing from 100 kHz to VBW)
VBW
— 10 —
ΔIMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both
sidebands)
Gain Flatness in 35 MHz Bandwidth @ Pout = 35 W Avg.
Gain Variation over Temperature
( - 30°C to +85°C)
GF — 0.5 —
ΔG — 0.016 —
Output Power Variation over Temperature
( - 30°C to +85°C)
ΔP1dB — 0.008 —
Unit
MHz
dB
dB/°C
dBm/°C
RF Device Data
Freescale Semiconductor
MRFE6S9160HR3 MRFE6S9160HSR3
3





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