MS20N06

MS20N06 N-Channel 60-V (D-S) MOSFET Features: Low rDS(on) trench technology Low thermal impedance Fast switching speed RoHS compliant package Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits Packing & Order Information Part No./ T：2,500/Reel Part No./ R：80/Tube , 4,000/Box Graphic symbol Publication Order Number: [MS20N06] © Bruckewell Technology Corporation Rev. A -2014 MS20N06 N-Channel 60-V (D-S) MOSFET MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (TA=25°C unless otherwise specified) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Continuous Drain Currenta (TA =25°C) IDM Pulsed Drain Currentb IS Continuous Source Current (Diode Conduction)a PD Power Dissipationa (TA =25°C) TJ/TSTG Operating Junction and Storage Temperature Value 60 ±20 19 75 72 50 -55 to +150 Unit V V A A A W °C Thermal Characteristics Symbol Parameter RθJC Junction-to-Case RθJA Junction-to-Ambienta Notes: a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Maximum 3 40 Units °C/W Static Symbol VGS(th) Parameter Gate-Threshold Voltage Test Conditions VDS = VGS, ID = -250μA Min Typ. Max. Units 1V IGSS Gate-Body Leakage VDS = 0 V , VGS = ±20 V ±100 nA IDSS ID(on) Zero Gate Voltage Drain Current On-State Drain CurrentA VDS = 48 V , VGS = 0 V VDS = 48 V , VGS = 0 V , TJ= 55°C VDS = 5 V, VGS = 10 V 30 1 uA 25 A r DS(on) gfs D...