MS6N40

MS6N40 N-Channel Enhancement Mode Power MOSFET Description The MS6N40 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features BVDSS=650V typically @ Tj=150°C Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic RoHS compliant package Application Adapter Switching Mode Power Supply Graphic symbol Packing & Order Information 50/Tube ; 1,000/Box MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (Tc=25°C unless otherwise specified) Symbol Parameter VDSS Drain to Source Voltage VGS Gate to Source Voltage Continuous Drain Current (TC=25°C) ID Continuous Drain Current (TC=100°C) IDM Drain Current Pulsed EAS Single Pulsed Avalanche Energy EAR Repetitive Avalanche Energy dv/dt Peak Diode Recovery dv/dt Drain current limited by maximum junction temperature Value 400 ±30 5.5 3.5 16.4 240 10 5.5 Unit V V A A mJ mJ V/ns Publication Order Number: [MS6N40] © Bruckewell Technology Corporation Rev. A -2014 MS6N40 N-Channel Enhancement Mode Power MOSFET Absolute Maximum Ratings (Tc=25°C unless otherwise specified) Symbol Parameter TL Maximum Temperature for Soldering @ Lead at 0.125 TL in(0.318mm) from case for 10 seconds TPKG TPKG Maximum Temperature for Soldering @ Package Body fo...