N-Channel MOSFET. MS6N95 Datasheet

MS6N95 MOSFET. Datasheet pdf. Equivalent

MS6N95 Datasheet
Recommendation MS6N95 Datasheet
Part MS6N95
Description N-Channel MOSFET
Feature MS6N95; MS6N95 950V N-Channel MOSFET Description The MS6N95 is a N-channel enhancement-mode MOSFET , providi.
Manufacture Bruckewell
Datasheet
Download MS6N95 Datasheet




Bruckewell MS6N95
MS6N95
950V N-Channel MOSFET
Description
The MS6N95 is a N-channel enhancement-mode
MOSFET , providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-220
package is universally preferred for all
commercial-industrial applications
Features
RDS(on) (Max 2.4 Ω )@VGS=10V
Gate Charge (Typical 33nC)
Improved dv/dt Capability, High Ruggedness
100% Avalanche Tested
Maximum Junction Temperature Range (150°C)
RoHS compliant package
Application
Adapter
Switching Mode Power Supply
Packing & Order Information
50/Tube ; 1,000/Box
Graphic symbol
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (Tc=25°C unless otherwise specified)
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current -Continuous (TC=25°C)
Drain Current -Continuous (TC=100°C)
IDM Drain Current Pulsed
VGS Gate-Source Voltage
EAS Single Pulsed Avalanche Energy
EAR Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
Value
950
6
3.8
24
±30
650
16.7
4.5
Unit
V
A
A
A
V
mJ
mJ
V/ns
Publication Order Number: [MS6N95]
© Bruckewell Technology Corporation Rev. A -2014



Bruckewell MS6N95
MS6N95
950V N-Channel MOSFET
Absolute Maximum Ratings (Tc=25°C unless otherwise specified)
Symbol
Parameter
Power Dissipation (TC=25°C)
PD
- Derate above 25°C
TJ/TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8'' from
case for 5 seconds
Drain current limited by maximum junction temperature
Value
56
0.48
-55 to +150
300
Unit
W
W/°C
°C
°C
Thermal Resistance Characteristics
Symbol
Parameter
RθJC Junction-to-Case
RθJA Junction-to-Ambient
Typ.
--
--
Max.
2.25
62.5
Units
°C/W
On Characteristics
Symbol Parameter
VGS Gate Threshold Voltage
RDS(ON)
Static Drain-Source On-Resistance
Test Conditions
VDS = VGS , ID = 250μA
VGS = 10 V , ID = 3 A
Min Typ. Max. Units
3.0 -- 5.0 V
-- 1.95 2.40 Ω
Off Characteristics
Symbol Parameter
BVDSS
BVDSS
/TJ
Drain-Source Breakdown
Voltage
Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain
IDSS Current
IGSSF
Gate-Body Leakage
Current,Forward
IGSSR
Gate-Body Leakage
Current,Reverse
Test Conditions
VGS = 0 V , ID = 250μA
ID=250μA , Referenced to 25°C
VDS = 950 V , VGS = 0 V
VDS = 720 V , VC = 125 °C
VGS = 30 V , VDS = 0 V
VGS = -30V , VDS = 0 V
Min
900
--
--
--
--
Typ.
--
0.6
--
--
--
Max.
--
Units
V
-- V/°C
10 μA
100
100 μA
-100
nA
Dynamic Characteristics
Symbol Parameter
CISS Input Capacitance
COSS
Coss Output Capacitance
CRSS
Crss Reverse Transfer Capacitance
Test Conditions
VDS = 25 V, VGS = 0 V,
f = 1.0MHz
Min Typ. Max. Units
-- 1500 -- pF
-- 120 -- pF
-- 12 -- pF
Publication Order Number: [MS6N95]
© Bruckewell Technology Corporation Rev. A -2014



Bruckewell MS6N95
MS6N95
950V N-Channel MOSFET
Switching Characteristics
Symbol Parameter
td(on)
Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Test Conditions
VDS = 450 V, ID = 6 A,
RG = 25 Ω
VDS = 720 V, ID = 6 A,
VGS = 10 V
Source-Drain Diode Maximum Ratings and Characteristics
Symbol Parameter
Test Conditions
IS Continuous Source-Drain Diode Forward Current
ISM ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS = 6 A , VGS = 0 V
Trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 6 A , VGS = 0 V
diF/dt=100A/μs
Notes:
1. Repeativity rating : pulse width limited by junction temperature
2. L = 34.0mH, IAS =6.0A, VDD = 50V, RG = 25Ω , Starting TJ = 25°C
3. ISD ≤ 6.0A, di/dt ≤ 200A/us, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2%
5. Essentially independent of operating temperature.
Min Typ. Max. Units
-- 50 -- ns
-- 100 -- ns
-- 50 -- ns
-- 60 -- ns
-- 33 -- nC
-- 10 -- nC
-- 13 -- nC
Min Typ. Max. Units
-- -- 6.0
A
-- -- 24.0
-- -- 1.4 V
-- 0.65 -- ns
-- 7.0 -- μC
Publication Order Number: [MS6N95]
© Bruckewell Technology Corporation Rev. A -2014







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