N-Channel MOSFET. MS8N50 Datasheet

MS8N50 MOSFET. Datasheet pdf. Equivalent


Bruckewell MS8N50
MS8N50
N-Channel Enhancement Mode Power MOSFET
Description
The MS8N50 is a N-channel enhancement-mode
MOSFET , providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-220
package is universally preferred for all
commercial-industrial applications
Features
BVDSS=550V typically @ Tj=150°C
Low On Resistance
Simple Drive Requirement
Low Gate Charge
Fast Switching Characteristic
RoHS compliant package
Application
Ballast
Inverter
Packing & Order Information
Graphic symbol
50/Tube ; 1,000/Box
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (Tc=25°C unless otherwise specified)
Symbol
Parameter
VDSS
Drain-Source Voltage
VGS Gate-Source Voltage
Drain Current -Continuous (TC=25°C)
ID
Drain Current -Continuous (TC=100°C)
IDM Drain Current Pulsed
IAR Avalanche Current
EAS Single Pulsed Avalanche Energy
EAR Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
• Drain current limited by maximum junction temperature
Value
500
±30
8.0
4.8
32
8.0
290
12.5
3.5
Unit
V
V
A
A
A
V
mJ
mJ
V/ns
Publication Order Number: [MS8N50]
© Bruckewell Technology Corporation Rev. A -2014


MS8N50 Datasheet
Recommendation MS8N50 Datasheet
Part MS8N50
Description N-Channel MOSFET
Feature MS8N50; MS8N50 N-Channel Enhancement Mode Power MOSFET Description The MS8N50 is a N-channel enhancement-.
Manufacture Bruckewell
Datasheet
Download MS8N50 Datasheet




Bruckewell MS8N50
MS8N50
N-Channel Enhancement Mode Power MOSFET
Absolute Maximum Ratings (Tc=25°C unless otherwise specified)
Symbol
Parameter
Maximum Temperature for Soldering @ Lead at 0.125
TL
in(0.318mm) from case for 10 seconds
TPKG
Maximum Temperature for Soldering @ Package Body for
10 seconds
Total Power Dissipation(@TC = 25 °C) 44 W
PD
Derating Factor above 25 °C
TSTG
Operating and Storage Temperature
TJ Storage Temperature
Note:
1. TJ=+25°C to +150°C.
2. Repetitive rating; pulse width limited by maximum junction temperature.
3. ISD=8A, dI/dt<100A/μs, VDD<BVDSS, TJ=+150°C.
4. IAS=8A, VDD=50V, L=8mH, RG=25Ω, starting TJ=+25°C.
Value
300
260
125
1.0
-55 to +150
150
Unit
°C
°C
W
W/°C
°C
°C
Thermal Characteristics
Symbol
Parameter
RθJC Thermal Resistance, Junction-to-Case
RθJA Thermal Resistance, Junction-to-Ambient
Min.
--
--
Typ.
--
--
Max.
1.0
62.5
Units
°C/W
Static Characteristics
Symbol Parameter
Test Conditions
Min Typ. Max. Units
BVDSS
Drain-Source Breakdown
Voltage
VGS = 0 V , ID = 250μA
Tj = 150°C
500 --
-- V
-- 550 -- V
BVDSS
/TJ
Breakdown Voltage
Temperature Coefficient
ID=250μA, Referenced to 25°C
--
0.60
-- V/°C
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 uA
2.0 -- 4.0 V
IDSS
Drain-Source Leakage
VDS = 500 V , VGS = 0 V
Current
VDS = 400 V , TC= 125°C
Gate-Body Leakage,
IGSS Forward
VGS = ±30
-- -- 1 uA
25
--
--
±100
nA
RDS(ON)
Static Drain-Source
On-state Resistance
VGS =10 V , ID = 4.0 V
-- 0.70 0.85 Ω
Publication Order Number: [MS8N50]
© Bruckewell Technology Corporation Rev. A -2014



Bruckewell MS8N50
MS8N50
N-Channel Enhancement Mode Power MOSFET
Dynamic Characteristics
Symbol Parameter
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge (Miller Charge)
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
td(on)
Turn-On Time
tr Rise Time
td(off) Turn-Off Delay Time
tf Fall Time
Test Conditions
VDD = 250 V,ID = 8 A,
VGS = 10 V
VDS = 25 V, VGS = 0 V,
f=1.0MHz
VDS = 250 V, ID = 8 A,
VGS = 10 V, RG = 10 Ω
Min
--
--
--
--
--
--
--
--
--
--
Typ.
30
5
16
1300
310
120
14
23
49
20
Max.
--
--
--
--
--
--
--
--
--
--
Units
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
Source-Drain Diode
Symbol Parameter
IS
ISM
VSD
trr
Qrr
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Test Conditions
VD = VG = 0,
VS = 1.3 V
IS = 8 A , VGS = 0 V
IS = 8 A , VGS = 0 V
diF/dt=100A/μs
Min Typ. Max. Units
-- -- 8.0
A
-- -- 32
-- -- 1.5 V
-- 460 -- ns
-- 4.2 -- uC
Publication Order Number: [MS8N50]
© Bruckewell Technology Corporation Rev. A -2014







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