MS8N50

MS8N50 N-Channel Enhancement Mode Power MOSFET Description The MS8N50 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features BVDSS=550V typically @ Tj=150°C Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic RoHS compliant package Application Ballast Inverter Packing & Order Information Graphic symbol 50/Tube ; 1,000/Box MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (Tc=25°C unless otherwise specified) Symbol Parameter VDSS Drain-Source Voltage VGS Gate-Source Voltage Drain Current -Continuous (TC=25°C) ID Drain Current -Continuous (TC=100°C) IDM Drain Current Pulsed IAR Avalanche Current EAS Single Pulsed Avalanche Energy EAR Repetitive Avalanche Energy dv/dt Peak Diode Recovery dv/dt Drain current limited by maximum junction temperature Value 500 ±30 8.0 4.8 32 8.0 290 12.5 3.5 Unit V V A A A V mJ mJ V/ns Publication Order Number: [MS8N50] © Bruckewell Technology Corporation Rev. A -2014 MS8N50 N-Channel Enhancement Mode Power MOSFET Absolute Maximum Ratings (Tc=25°C unless otherwise specified) Symbol Parameter Maximum Temperature for Soldering @ Lead at 0.125 TL in(0.318mm) from case for 10 seconds TPKG Maximum Temperature for Solderi...