N-Channel MOSFET
MS8N50
N-Channel Enhancement Mode Power MOSFET
Description
The MS8N50 is a N-channel enhancement-mode
MOSFET , provi...
Description
MS8N50
N-Channel Enhancement Mode Power MOSFET
Description
The MS8N50 is a N-channel enhancement-mode
MOSFET , providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-220
package is universally preferred for all
commercial-industrial applications
Features BVDSS=550V typically @ Tj=150°C
Low On Resistance
Simple Drive Requirement
Low Gate Charge
Fast Switching Characteristic
RoHS compliant package
Application Ballast
Inverter
Packing & Order Information
Graphic symbol
50/Tube ; 1,000/Box
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (Tc=25°C unless otherwise specified)
Symbol
Parameter
VDSS
Drain-Source Voltage
VGS Gate-Source Voltage
Drain Current -Continuous (TC=25°C) ID
Drain Current -Continuous (TC=100°C)
IDM Drain Current Pulsed
IAR Avalanche Current
EAS Single Pulsed Avalanche Energy
EAR Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
Drain current limited by maximum junction temperature
Value 500 ±30 8.0 4.8 32 8.0 290 12.5 3.5
Unit V V A A A V mJ mJ
V/ns
Publication Order Number: [MS8N50]
© Bruckewell Technology Corporation Rev. A -2014
MS8N50
N-Channel Enhancement Mode Power MOSFET
Absolute Maximum Ratings (Tc=25°C unless otherwise specified)
Symbol
Parameter
Maximum Temperature for Soldering @ Lead at 0.125 TL
in(0.318mm) from case for 10 seconds
TPKG
Maximum Temperature for Solderi...
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