MS8N60

MS8N60 N-Channel Enhancement Mode Power MOSFET Description The MS8N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic RoHS compliant package Application Adapter Switching Mode Power Supply Packing & Order Information 50/Tube ; 1,000/Box Graphic symbol MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings Symbol Parameter VDSS Drain-Source Voltage VGS Gate-Source Voltage Drain Current -Continuous (TC=25°C) ID Drain Current -Continuous (TC=100°C) IDM Drain Current Pulsed IAR Avalanche Current EAS Single Pulsed Avalanche Energy EAR Repetitive Avalanche Energy dv/dt Peak Diode Recovery dv/dt Drain current limited by maximum junction temperature Value 600 ±30 7.5 4.5 30 7.5 230 14.7 4.5 Unit V V A A A V mJ mJ V/ns Publication Order Number: [MS8N60] © Bruckewell Technology Corporation Rev. A -2014 MS8N60 N-Channel Enhancement Mode Power MOSFET Absolute Maximum Ratings Symbol Parameter Maximum Temperature for Soldering @ Lead at 0.125 TL in(0.318mm) from case for 10 seconds Total Power Dissipation(@TC = 25 °C) 44 W PD Derating Factor above 25 °C TSTG Operating and Storage Temperature TJ Storage T...