N-Channel MOSFET. SGM2310 Datasheet

SGM2310 MOSFET. Datasheet pdf. Equivalent


SeCoS SGM2310
Elektronische Bauelemente
SGM2310
3A, 60V,RDS(ON) 90m
N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
Description
SOT-89
The SGM2310 utilized advanced processing techniques
to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.The SGM2310 is
universally used for all commercial-industrial applications.
Features
* Small Package Outline
* Simple Drive Requirement
D
G
S
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current,3VGS@4.5V
Continuous Drain Current,3VGS@4.5V
Pulsed Drain Current1,2
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
4.4 4.6
4.05 4.25
1.50 1.70
1.30 1.50
2.40 2.60
0.89 1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min. Max.
3.00 REF.
1.50 REF.
0.40 0.52
1.40 1.60
0.35 0.41
5° TYP.
0.70 REF.
Symbol
VDS
VGS
ID@TA=25 oC
ID@TA=70 oC
IDM
PD@TA=25 oC
Tj, Tstg
Ratings
60
±20
3.0
2.3
10
1.5
0.01
-55~+150
Unit
V
V
A
A
A
W
W / oC
oC
Thermal Data
Parameter
Thermal Resistance Junction-ambient 3
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Max.
Symbol
Rthj-a
Ratings
83.3
Unit
oC /W
Any changing of specification will not be informed individual
Page 1 of 4


SGM2310 Datasheet
Recommendation SGM2310 Datasheet
Part SGM2310
Description N-Channel MOSFET
Feature SGM2310; Elektronische Bauelemente SGM2310 3A, 60V,RDS(ON) 90m N-Channel Enhancement Mode Power Mos.FET RoHS.
Manufacture SeCoS
Datasheet
Download SGM2310 Datasheet




SeCoS SGM2310
Elektronische Bauelemente
SGM2310
3A, 60V,RDS(ON) 90m
N-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25oC Unless otherwise specified)
Parameter
Symbol
Drain-Source Breakdown Voltage
BVDSS
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
BVDS/ Tj
VGS(th)
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70 oC)
IGSS
IDSS
Static Drain-Source On-Resistance
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Forward Transconductance
RDS(ON)
Qg
Qgs
Qgd
Td(ON)
Tr
Td(Off)
Tf
Ciss
Coss
Crss
Gfs
Min.
60
_
1.0
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
Typ.
_
0.05
_
_
_
_
_
_
6
1.6
3
6
5
16
3
490
55
40
5
Max.
_
_
3.0
±100
10
25
90
120
10
_
_
_
_
_
_
780
_
_
_
Unit Test Condition
V
V/ oC
VGS=0V, ID=250uA
Reference to 25oC, ID=1mA
V VDS=VGS, ID=250uA
nA VGS=± 20V
uA VDS=60V,VGS=0
uA VDS=48V,VGS=0
VGS=10V, ID=3A
m
VGS=4.5V, ID=2A
ID= 3A
nC VDS=48V
VGS=4.5V
VDS=30V
ID=1A
nS VGS=10V
RG=3.3
RD=30
VGS=0V
pF VDS=25V
f=1.0MHz
S VDS=5V, ID=3A
Source-Drain Diode
Parameter
Forward On Voltage 2
Reverse Recovery Time
Reverse Recovery Charge
Symbol
VSD
Trr
Qrr
Min.
_
_
_
Typ.
_
25
26
Max.
1.2
_
_
Unit
V
nS
nC
Test Condition
IS=1.2A, VGS=0V.
Is=3A,VGS=0V
dl/dt=100A/uS
Notes: 1.Pulse width limited by Max. junction temperature.
2.Pulse width 300us, dutycycle 2%.
3.Surface mounted on FR4 board, t 10sec.
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 4



SeCoS SGM2310
Elektronische Bauelemente
Characteristics Curve
SGM2310
3A, 60V,RDS(ON) 90m
N-Channel Enhancement Mode Power Mos.FET
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristics of
http://www.SeCoSGmbH.com/
Reverse Diode
01-Jun-2002 Rev. A
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
Any changing of specification will not be informed individual
Page 3 of 4





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