Power-Management Solution. MAX17000 Datasheet

MAX17000 Solution. Datasheet pdf. Equivalent


Maxim Integrated MAX17000
EVALUATION KIT AVAILABLE
MAX17000
Complete DDR2 and DDR3 Memory
Power-Management Solution
General Description
The MAX17000 pulse-width modulation (PWM) con-
troller provides a complete power solution for notebook
DDR, DDR2, and DDR3 memory. It comprises a step-
down controller, a source/sink LDO regulator, and a ref-
erence buffer to generate the required VDDQ, VTT, and
VTTR rails.
The VDDQ rail is supplied by a step-down converter
using Maxim’s proprietary Quick-PWM™ controller. The
high-efficiency, constant-on-time PWM controller han-
dles wide input/output voltage ratios (low duty-cycle
applications) with ease and provides 100ns response
to load transients while maintaining a relatively constant
switching frequency. The Quick-PWM architecture cir-
cumvents the poor load-transient timing problems of
fixed-frequency current-mode PWMs while also avoid-
ing the problems caused by widely varying switching
frequencies in conventional constant-on-time and con-
stant-off-time PWM schemes. The controller senses the
current to achieve an accurate valley current-limit pro-
tection. It is also built in with overvoltage, undervoltage,
and thermal protections. The MAX17000 can be set to
run in three different modes: power-efficient SKIP
mode, low-noise forced-PWM mode, and standby
mode to support memory in notebook computer stand-
by operation. The switching frequency is programma-
ble from 200kHz to 600kHz to allow small components
and high efficiency. The VDDQ output voltage can be
set to a preset 1.8V or 1.5V, or be adjusted from 1.0V to
2.5V by an external resistor-divider. This output has 1%
accuracy over line-and-load operating range.
The MAX17000 includes a ±2A source/sink LDO regu-
lator for the memory termination VTT rail. This VTT regu-
lator has a ±5mV deadband that either sources or
sinks, ideal for the fast-changing load burst present in
memory termination applications. This feature also
reduces output capacitance requirements.
The VTTR reference buffer sources and sinks ±3mA,
providing the reference voltage needed by the memory
controller and devices on the memory bus.
The MAX17000 is available in a 24-pin, 4mm x 4mm,
TQFN package.
Applications
Notebook Computers
DDR, DDR2, and DDR3 Memory Supplies
SSTL Memory Supplies
Features
o SMPS Regulator (VDDQ)
Quick-PWM with 100ns Load-Step Response
Output Voltages—Preset 1.8V, 1.5V, or
Adjustable 1.0V to 2.5V
1% VOUT Accuracy Over Line and Load
26V Maximum Input Voltage Rating
Accurate Valley Current-Limit Protection
200kHz to 600kHz Switching Frequency
o Source/Sink Linear Regulator (VTT)
±2A Peak Source/Sink
Low-Output Capacitance Requirement
Output Voltages-Preset VDDQ/2 or REFIN
Adjustable from 0.5V to 1.5V
o Low Quiescent Current Standby State
o Soft-Start/Soft-Shutdown
o SMPS Power-Good Window Comparator
o VTT Power-Good Window Comparator
o Selectable Overvoltage Protection
o Undervoltage/Thermal Protections
o ±3mA Reference Buffer (VTTR)
Ordering Information
PART
TEMP RANGE
PIN-PACKAGE
MAX17000ETG+
-40°C to +85°C
24 TQFN-EP*
+Denotes a lead(Pb)-free/RoHS-compliant package.
*EP = Exposed pad.
Pin Configuration
TOP VIEW
18 17 16 15 14 13
VDD 19
12 CSL
PGND1 20
11 FB
AGND 21
SKIP 22
MAX17000ETG+
10 REFIN
9 VTTI
VCC 23
8 VTT
SHDN 24
7 PGND2
12 3 4 56
Quick-PWM is a trademark of Maxim Integrated Products, Inc.
TQFN
4mm x 4mm
For pricing, delivery, and ordering information, please contact Maxim Direct
at 1-888-629-4642, or visit Maxim’s website at www.maximintegrated.com.
19-4125; Rev 2; 4/13


MAX17000 Datasheet
Recommendation MAX17000 Datasheet
Part MAX17000
Description Complete DDR2 and DDR3 Memory Power-Management Solution
Feature MAX17000; EVALUATION KIT AVAILABLE MAX17000 Complete DDR2 and DDR3 Memory Power-Management Solution General .
Manufacture Maxim Integrated
Datasheet
Download MAX17000 Datasheet




Maxim Integrated MAX17000
MAX17000
Complete DDR2 and DDR3 Memory
Power-Management Solution
ABSOLUTE MAXIMUM RATINGS
TON to PGND1 .......................................................-0.3V to +28V
VDD to PGND1..........................................................-0.3V to +6V
VCC to VDD ............................................................-0.3V to +0.3V
OVP to AGND ...........................................................-0.3V to +6V
SHDN, STDBY, SKIP to AGND .................................-0.3V to +6V
REFIN, FB, PGOOD1,
PGOOD2 to AGND ................................-0.3V to (VCC + 0.3V)
CSH, CSL to AGND ....................................-0.3V to (VCC + 0.3V)
DL to PGND1..............................................-0.3V to (VDD + 0.3V)
BST to PGND1...........................................................-1V to +34V
BST to LX..................................................................-0.3V to +6V
DH to LX ....................................................-0.3V to (VBST + 0.3V)
BST to VDD .............................................................-0.3V to +28V
VTTI to PGND2 .........................................................-0.3V to +6V
VTT to PGND2 ............................................-0.3V to (VTTI + 0.3V)
VTTS to AGND............................................-0.3V to (VCC + 0.3V)
VTTR to AGND ..........................................-0.3V to (VCSL + 0.3V)
PGND1, PGND2 to AGND.....................................-0.3V to +0.3V
Continuous Power Dissipation (TA = +70°C)
24-Pin, 4mm x 4mm TQFN-EP
(derated 27.8mW/°C above +70°C) ..........................2222mW
Operating Temperature Range ...........................-40°C to +85°C
Junction Temperature ......................................................+150°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(VIN = 12V, VCC = VDD = VSHDN = VREFIN = 5V, VCSL = 1.8V, STDBY = SKIP = AGND, TA = 0°C to +85°C, unless otherwise noted.
Typical values are at TA = +25°C.) (Note 1)
PARAMETER
SYMBOL
CONDITIONS
MIN TYP MAX UNITS
PWM CONTROLLER
Input Voltage Range
Output Voltage Accuracy
VIN
VCC, VDD
VCSL
VIN = 4.5V to 26V,
SKIP = VCC
FB = AGND
FB = VCC
FB = Adj
3
4.5
1.485
1.782
0.99
1.500
1.800
1.000
26
5.5
1.515
1.818
1.01
V
V
Output Voltage Range
Load Regulation Error
Line Regulation Error
Soft-Start Ramp Time
Soft-Stop Ramp Time
Soft-Stop Threshold
VCSL
tSSTART
tSSTOP
VCSH - VCSL = 0 to 18mV, SKIP = VCC
VDD = 4.5V to 5.5V, VIN = 4.5V to 26V
Rising edge of SHDN
Falling edge of SHDN
1 2.7 V
0.1 %
0.25
%
1.4 2.1
ms
2.8 ms
25 mV
RTON = 96.75k
(600kHz), 167ns nominal
-15
+15
On-Time Accuracy (Note 2)
tON
VIN = 12V,
VCSL = 1.2V
RTON = 200k (300kHz),
333ns nominal
-10
+10 %
RTON = 303.25k
(200kHz), 500ns nominal
-15
+15
2 Maxim Integrated



Maxim Integrated MAX17000
MAX17000
Complete DDR2 and DDR3 Memory
Power-Management Solution
ELECTRICAL CHARACTERISTICS (continued)
(VIN = 12V, VCC = VDD = VSHDN = VREFIN = 5V, VCSL = 1.8V, STDBY = SKIP = AGND, TA = 0°C to +85°C, unless otherwise noted.
Typical values are at TA = +25°C.) (Note 1)
PARAMETER
SYMBOL
CONDITIONS
MIN TYP MAX UNITS
Minimum Off-Time
tOFF(MIN) (Note 2)
250 350
ns
Quiescent Supply Current (VDD)
IDD
FB forced above 1.0V, STDBY = AGND or
VCC, TA = +25°C
0.01 1.00
μA
Quiescent Supply Current (VCC)
FB forced above 1.0V (SMPS, VTT, and
VTTR blocks); STDBY = VCC
ICC
FB forced above 1.0V (ultra-skip and VTTR
blocks); STDBY = AGND
24
275 475
mA
μA
Shutdown Supply Current
(VDD + VCC)
TON Pin Shutdown Current
LINEAR REGULATOR (VTT)
VTTI Input Voltage Range
VTTI Supply Current
VTTI Shutdown Current
REFIN Input Bias Current
REFIN Range
REFIN Disable Threshold
ICC + IDD SHDN = AGND, TA = +25°C
ITON
SHDN = AGND, VIN = 26V, VDD = 0 or 5V,
TA = +25°C
0.01
5
0.01 1.00
VTTI
IVTTI
VREFIN
VVTTI = 2.5V, VREFIN = 1.4V
SHDN = AGND, TA = +25°C
VVTTI = 2.5V, VREFIN = 1.4V
1.0
10
-50
0.5
VCC -
0.3
2.8
50
10
+50
1.5
μA
μA
V
μA
μA
nA
V
V
VTT Internal MOSFET
VTT Output-Accuracy
Source Load
High-side on-resistance
(source, IVTT = 0.1A)
Low-side on-resistance (sink, IVTT = 0.1A)
(VREFIN - 5mV) or
(VCSL/2 - 5mV) to
VTTS, VTT = VTTS
VREFIN = 1V,
IVTT = +50μA
VREFIN = 0.5V to 1.5V,
IVTT = +300mA
-5
0.12
0.18
0.25
0.36
+5
-5

mV
VTT Output-Accuracy
Sink Load
VTT Load Regulation
VTT Line Regulation
VTT Current Limit
VTT Current-Limit Soft-Start Time
VTT Discharge MOSFET
VTTS Input Current
(VREFIN + 5mV) or
(VCSL/2 + 5mV) to
VTTS, VTT = VTTS
VREFIN = 1V,
IVTT = -50μA
VREFIN = 0.5V to 1.5V,
IVTT = -300mA
-50μA to -1A  IVTT  +50μA to +1A
1.0V  VTTI  2.8V, IVTT = ±100mA
Source
Sink
With respect to internal VTT_EN signal
OVP = VCC
TA = +25°C
-5
2
-4
+5
mV
+5
13 17 mV/A
1 mV
4
A
-2
160 μs
16 
0.1 1.0
μA
Maxim Integrated
3





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