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CM50MD1-12H

Mitsubishi Electric Semiconductor

IGBT Module

MITSUBISHI IGBT MODULES CM50MD1-12H MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE CM50MD1-12H ¡IC ..........


Mitsubishi Electric Semiconductor

CM50MD1-12H

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MITSUBISHI IGBT MODULES CM50MD1-12H MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE CM50MD1-12H ¡IC ..................................................................... 50A ¡VCES ............................................................ 600V ¡Insulated Type ¡CIB Module 3φ Inverter+3φ Converter ¡UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION AC & DC motor controls, General purpose inverters, Servo controls, NC, Robotics, UPS OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 8 P 15 P1 15 N EU EV EW GU GU GV GW 17.2 10.16 10.16 10.16 2.54 2.54 2.54 2.54 2.54 2.54 2.54 GV GW E GB ; NOT CONNECTED P R S T N P1 GU EU GU GV EV GV GW EW GW 29 ±0.25 GE GE GE GBGGGE E B U V W CIRCUIT DIAGRAM 60 R S T B U V W 29 ±0.25 2–φ4.5 MOUNTING HOLES 58 13 12.5 12.5 15 5 15 12.5 12.5 2–R5.5 9 4 2 t = 0.6 0.6 t = 0.6 105 ±0.25 115 6.3 LABEL 12 45° MAIN CIRCUIT TERMINAL CONTROL CIRCUIT TERMINAL Feb.1999 MITSUBISHI IGBT MODULES CM50MD1-12H MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE MAXIMUM RATINGS INVERTER PART Symbol VCES VGES IC ICM IE (Note. 1) IEM (Note. 1) PC (Note. 3) (Tj = 25°C) Parameter Collector-emitter voltage Gate-emitter voltage Collector Current Emitter Current Maximum collector dissipation G – E Short C – E Short TC = 25°C PULSE TC = 25°C PULSE Tf = 25°C Condition (Note. 2) (Note. 2) Rating 600 ±20 50 100 50 100 104 Unit V V A A A A W CONVERTER PART Symbol VRRM Ea IO IFSM I2t Paramete...




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