Document
MITSUBISHI IGBT MODULES
CM50TF-12H
MEDIUM POWER SWITCHING USE INSULATED TYPE
A B C
BuP EuP BvP EvP BwP EwP
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u v w
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D
BuN EuN
BvN EvN
BwN EwN
S - DIA. (2 TYP.)
M R
F R L
F R L
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Q TAB #110, t = 0.5
TAB #250, t = 0.8
G P
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P (BuP) GuP EuP u (BvP) GvP EvP v (BwP) GwP EwP w
Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of six IGBTs in a three phase bridge configuration, with each transistor having a reverse-connected superfast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: ٗ Low Drive Power ٗ Low VCE(sat) ٗ Discrete Super-Fast Recovery Free-Wheel Diode ٗ High Frequency Operation ٗ Isolated Baseplate for Easy Heat Sinking Applications: ٗ AC Motor Control ٗ Motion/Servo Control ٗ UPS ٗ Welding Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM50TF-12H is a 600V (VCES), 50 Ampere SixIGBT Module.
Type CM Current Rating Amperes 50 VCES Volts (x 50) 12
(BuN) GuN EuN N
(BvN) GvN EvN
(BwN) GwN EwN
Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J Inches 5.00 4.33±0.01 3.86 2.20 1.57 1.12 1.04 1.01 0.98 Millimeters 127.0 110.0±0.2 98.0 56.0 40.0 28.5 26.5 25.6 25.0 Dimensions K L M N P Q R S Inches 0.85 0.83 0.75 0.71 0.69 0.65 0.30 0.22 Dia. Millimeters 21.5 21.0 19.0 18.0 17.5 16.5 7.5 Dia. 5.5
Sep.1998
MITSUBISHI IGBT MODULES
CM50TF-12H
MEDIUM POWER SWITCHING USE INSULATED TYPE Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage (C-E SHORT) Collector Current (TC = 25°C) Peak Collector Current Emitter Current** (TC = 25°C) Peak Emitter Current Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C) Mounting Torque, M5 Mounting Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
*Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Symbol Tj Tstg VCES VGES IC ICM IE IEM Pc – – Viso
CM50TF-12H –40 to 150 –40 to 125 600 ±20 50 100* 50 100* 250 1.47 ~ 1.96 390 2500
Units °C °C Volts Volts Amperes Amperes Amperes Amperes Watts N·m Grams Vrms
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Collector-Cutoff Current Gate Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) QG VEC Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 5mA, VCE = 10V IC = 50A, VGE = 15V IC = 50A, VGE = 15V, Tj = 150°C Total Gate Charge Emitter-Collector Voltage VCC = 300V, IC = 50A, VGE = 15V IE = 50A, VGE = 0V Min. – – 4.5 – – – – Typ. – – 6.0 2.1 2.15 150 – Max. 1.0 0.5 7.5 2.8** – – 2.8 Units mA µA Volts Volts Volts nC Volts
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Resistive Load Switching Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr IE = 50A, diE/dt = –100A/µs IE = 50A, diE/dt = –100A/µs VCC = 300V, IC = 50A, VGE1 = VGE2 = 15V, RG = 13Ω VGE = 0V, VCE = 10V Test Conditions Min. – – – – – – – – – Typ. – – – – – – – – 0.14 Max. 5 1.8 1 200 300 200 300 110 – Units nF nF nF ns ns ns ns ns µC
Diode Reverse Recovery Time Diode Reverse Recovery Charge
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Contact Thermal Resistance Symbol Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions Per IGBT Per FWDi Per Module, Thermal Grease Applied Min. – – – Typ. – – – Max. 0.50 1.00 0.042 Units °C/W °C/W °C/W
Sep.1998
MITSUBISHI IGBT MODULES
CM50TF-12H
MEDIUM POWER SWITCHING USE INSULATED TYPE
OUTPUT CHARACTERISTICS (TYPICAL)
TRANSFER CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
100
Tj = 25oC
COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES)
100
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)
5
VCE = 10V Tj = 25°C Tj = 125°C VGE = 15V Tj = 25°C Tj = 125°C
VGE = 20V 15
12
75
11
75
4
3
50
10
50
2
25
7
9 8
25
1
0 0 2 4 6 8 10
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
0 0 4 8 12 16 20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
0 0 25 50 75 100
COLLECTOR-CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL)
CAPACITANCE VS. VCE (TYPICAL)
10
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat.