Document
FGA30S120P Shorted AnodeTM IGBT
FGA30S120P
Shorted AnodeTM IGBT
Features
• High speed switching • Low saturation voltage: VCE(sat) =1.75V @ IC = 30A • High input impedance • RoHS compliant
Applications
• Induction Heating and Microwave Oven • Soft Switching Applications
October 2012
General Description
Using advanced Field Stop Trench and Shorted Anode technology, Fairchild’s Shorted AnodeTM Trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche capability. This device is designed for induction heating and microwave oven.
C
GCE
TO-3PN
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Description
VCES VGES IC
ICM (1)
Collector to Emitter Voltage Gate to Emitter Voltage Collector Current Collector Current Pulsed Collector Current
@ TC = 25oC @ TC = 100oC
IF
Diode Continuous Forward Current
@ TC = 25oC
IF
Diode Continuous Forward Current
@ TC = 100oC
PD
Maximum Power Dissipation Maximum Power Dissipation
@ TC = 25oC @ TC = 100oC
TJ Operating Junction Temperature
Tstg Storage Temperature Range
TL
Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds
Thermal Characteristics
Symbol
RθJC(IGBT) RθJA
Parameter
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Notes: 1: Limited by Tjmax
G
E
Ratings
1300 ±25 60 30 150 60 30 348 174 -55 to +175 -55 to +175
300
Typ.
---
Max.
0.43 40
Units
V V A A A A A W W oC oC
oC
Units
oC/W oC/W
©2012 Fairchild Semiconductor Corporation FGA30S120P Rev. C1
1
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FGA30S120P Shorted AnodeTM IGBT
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
FGA30S120P
FGA30S120P
TO-3PN
-
Tape Width
-
Quantity
30
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
Off Characteristics
ICES IGES
Collector Cut-Off Current G-E Leakage Current
VCE = 1300, VGE = 0V VGE = VGES, VCE = 0V
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat) Collector to Emitter Saturation Voltage
VFM Diode Forward Voltage
IC = 30mA, VCE = VGE IC = 30A, VGE = 15V TC = 25oC IC = 30A, VGE = 15V, TC = 125oC IC = 30A, VGE = 15V, TC = 175oC IF = 30A, TC = 25oC IF = 30A, TC = 175oC
Dynamic Characteristics
Cies Coes Cres
Input Capacitance Output Capacitance Reverse Transfer Capacitance
VCE = 30V, VGE = 0V, f = 1MHz
Switching Characcteristics
td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate to Emitter Charge Gate to Collector Charge
VCC = 600V, IC = 30A, RG = 10Ω, VGE = 15V, Resistive Load, TC = 25oC
VCC = 600V, IC = 30A, RG = 10Ω, VGE = 15V, Resistive Load, TC = 175oC
VCE = 600V, IC = 30A, VGE = 15V
- - 1 mA
-
-
±500
nA
4.5 6.0 7.5 - 1.75 2.3
- 1.85 -
- 1.9 - 1.7 2.2 - 2.1 -
V V
V
V V V
- 3345 - 75 - 60 -
pF pF pF
- 39 - ns
- 360 -
ns
- 620 -
ns
-
160 210
ns
- 1.3 - mJ
-
1.22 1.6
mJ
- 2.52 -
mJ
- 38 - ns
- 375 -
ns
- 635 -
ns
- 270 -
ns
- 1.59 -
mJ
- 1.78 -
mJ
- 3.37 -
mJ
- 78 - nC
- 4.2 - nC
- 33.3 -
nC
FGA30S120P Rev. C1
2
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FGA30S120P 1200V, 30A ShortedAnodeTM IGBT
Typical Performance Characteristics
Collector Current, IC [A]
Figure 1. Typical Output Characteristics
200 TC = 25oC
20V 15V
160 VGE = 17V
12V
10V 120
9V 80
8V 40
7V
0 02 46 Collector-Emitter Voltage, VCE [V]
8
Figure 3. Typical Saturation Voltage Characteritics
200 Common Emitter VGE = 15V
160 TC = 25oC TC = 175oC
120
Collector Current, IC [A]
80
40
Collector-Emitter Voltage, VCE [V]
0 0.0 1.0 2.0 3.0 4.0 5.0 6.0
Collector-Emitter Voltage, VCE [V]
Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level
3.5 Common Emitter VGE = 15V
3.0 60A
2.5
2.0 30A
1.5 IC = 15A
1.0 25 50 75 100 125 150 175 Collector-EmitterCase Temperature, TC [oC]
Figure 2. Typical Output Characteristics
200 TC = 175oC
160
20V VGE = 17V
15V 12V
Collector Current, IC [A]
120 10V
80 9V
8V 40
7V
0 02 46 Collector-Emitter Voltage, VCE [V]
Figure 4. Transfer Characteristics
8
200 Common Emitter VCE = 20V
160 TC = 25oC TC = 175oC
120
Collector Current, IC [A]
80
40
0 012345 Gate-Emitter Voltage,VGE [V]
Figure 6. Saturation Voltage vs. VGE
6
Collector-Emitter Voltage, VCE [V]
20 Common Emitter TC = 25oC
16
12
8
30A 60A 4
IC = 15A 0
4 8 12 16 20 Gate-Emitter Voltage, VGE [V]
FGA30S120P Rev. C1
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FGA30S120P Shorted AnodeTM IGBT
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
20 Common Emitter TC = 175oC
16
Collector-Emitter Voltage, VCE [V]
12
8 30A
4 60A
IC = 15A 0
4 8 12 16 Gate-Emitter Voltage, VGE [V]
20
Figure .