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FGA30S120P Dataheets PDF



Part Number FGA30S120P
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description IGBT
Datasheet FGA30S120P DatasheetFGA30S120P Datasheet (PDF)

FGA30S120P Shorted AnodeTM IGBT FGA30S120P Shorted AnodeTM IGBT Features • High speed switching • Low saturation voltage: VCE(sat) =1.75V @ IC = 30A • High input impedance • RoHS compliant Applications • Induction Heating and Microwave Oven • Soft Switching Applications October 2012 General Description Using advanced Field Stop Trench and Shorted Anode technology, Fairchild’s Shorted AnodeTM Trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exc.

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FGA30S120P Shorted AnodeTM IGBT FGA30S120P Shorted AnodeTM IGBT Features • High speed switching • Low saturation voltage: VCE(sat) =1.75V @ IC = 30A • High input impedance • RoHS compliant Applications • Induction Heating and Microwave Oven • Soft Switching Applications October 2012 General Description Using advanced Field Stop Trench and Shorted Anode technology, Fairchild’s Shorted AnodeTM Trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche capability. This device is designed for induction heating and microwave oven. C GCE TO-3PN Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Description VCES VGES IC ICM (1) Collector to Emitter Voltage Gate to Emitter Voltage Collector Current Collector Current Pulsed Collector Current @ TC = 25oC @ TC = 100oC IF Diode Continuous Forward Current @ TC = 25oC IF Diode Continuous Forward Current @ TC = 100oC PD Maximum Power Dissipation Maximum Power Dissipation @ TC = 25oC @ TC = 100oC TJ Operating Junction Temperature Tstg Storage Temperature Range TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds Thermal Characteristics Symbol RθJC(IGBT) RθJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Notes: 1: Limited by Tjmax G E Ratings 1300 ±25 60 30 150 60 30 348 174 -55 to +175 -55 to +175 300 Typ. --- Max. 0.43 40 Units V V A A A A A W W oC oC oC Units oC/W oC/W ©2012 Fairchild Semiconductor Corporation FGA30S120P Rev. C1 1 www.fairchildsemi.com FGA30S120P Shorted AnodeTM IGBT Package Marking and Ordering Information Device Marking Device Package Reel Size FGA30S120P FGA30S120P TO-3PN - Tape Width - Quantity 30 Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics ICES IGES Collector Cut-Off Current G-E Leakage Current VCE = 1300, VGE = 0V VGE = VGES, VCE = 0V On Characteristics VGE(th) G-E Threshold Voltage VCE(sat) Collector to Emitter Saturation Voltage VFM Diode Forward Voltage IC = 30mA, VCE = VGE IC = 30A, VGE = 15V TC = 25oC IC = 30A, VGE = 15V, TC = 125oC IC = 30A, VGE = 15V, TC = 175oC IF = 30A, TC = 25oC IF = 30A, TC = 175oC Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz Switching Characcteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate to Emitter Charge Gate to Collector Charge VCC = 600V, IC = 30A, RG = 10Ω, VGE = 15V, Resistive Load, TC = 25oC VCC = 600V, IC = 30A, RG = 10Ω, VGE = 15V, Resistive Load, TC = 175oC VCE = 600V, IC = 30A, VGE = 15V - - 1 mA - - ±500 nA 4.5 6.0 7.5 - 1.75 2.3 - 1.85 - - 1.9 - 1.7 2.2 - 2.1 - V V V V V V - 3345 - 75 - 60 - pF pF pF - 39 - ns - 360 - ns - 620 - ns - 160 210 ns - 1.3 - mJ - 1.22 1.6 mJ - 2.52 - mJ - 38 - ns - 375 - ns - 635 - ns - 270 - ns - 1.59 - mJ - 1.78 - mJ - 3.37 - mJ - 78 - nC - 4.2 - nC - 33.3 - nC FGA30S120P Rev. C1 2 www.fairchildsemi.com FGA30S120P 1200V, 30A ShortedAnodeTM IGBT Typical Performance Characteristics Collector Current, IC [A] Figure 1. Typical Output Characteristics 200 TC = 25oC 20V 15V 160 VGE = 17V 12V 10V 120 9V 80 8V 40 7V 0 02 46 Collector-Emitter Voltage, VCE [V] 8 Figure 3. Typical Saturation Voltage Characteritics 200 Common Emitter VGE = 15V 160 TC = 25oC TC = 175oC 120 Collector Current, IC [A] 80 40 Collector-Emitter Voltage, VCE [V] 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 Collector-Emitter Voltage, VCE [V] Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 3.5 Common Emitter VGE = 15V 3.0 60A 2.5 2.0 30A 1.5 IC = 15A 1.0 25 50 75 100 125 150 175 Collector-EmitterCase Temperature, TC [oC] Figure 2. Typical Output Characteristics 200 TC = 175oC 160 20V VGE = 17V 15V 12V Collector Current, IC [A] 120 10V 80 9V 8V 40 7V 0 02 46 Collector-Emitter Voltage, VCE [V] Figure 4. Transfer Characteristics 8 200 Common Emitter VCE = 20V 160 TC = 25oC TC = 175oC 120 Collector Current, IC [A] 80 40 0 012345 Gate-Emitter Voltage,VGE [V] Figure 6. Saturation Voltage vs. VGE 6 Collector-Emitter Voltage, VCE [V] 20 Common Emitter TC = 25oC 16 12 8 30A 60A 4 IC = 15A 0 4 8 12 16 20 Gate-Emitter Voltage, VGE [V] FGA30S120P Rev. C1 3 www.fairchildsemi.com FGA30S120P Shorted AnodeTM IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE 20 Common Emitter TC = 175oC 16 Collector-Emitter Voltage, VCE [V] 12 8 30A 4 60A IC = 15A 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 Figure .


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