FJBE2150D

FJBE2150D — ESBC™ Rated NPN Silicon Transistor January 2016 FJBE2150D ESBC™ Rated NPN Silicon Transistor ESBC Features (FDC655 MOSFET) VCS(ON) 0.131 V IC 0.5 A Equiv. RCS(ON) 0.261 Ω(1) Low Equivalent On Resistance Very Fast Switch: 150 kHz Squared RBSOA: Up to 1500 V Avalanche Rated Low Driving Capacitance, No Miller Capacitance Typ. 12 pF Capacitance at 200 V) Low Switching Losses Reliable HV Switch: No False Triggering due to High dv/dt Transients Applications High-Voltage and High-Speed Power Switches Emitter-Switched Bipolar/MOSFET Cascode (ESBC™) Smart Meters, Smart Breakers, HV Industrial Power Supplies Motor Drivers and Ignition Drivers Description The FJBE2150D is a low-cost, high-performance power switch designed to be used in an ESBC™ configuration in applications such as: power supplies, motor drivers, smart grid, or ignition switches. The power switch is designed to operate up to 1500 volts and up to 3 amps, while providing exceptionally low on-resistance and very low switching losses. The ESBC™ switch is designed to be driven using off-theshelf power supply controllers or drivers. The ESBC™ MOSFET is a low-voltage, low-cost, surface-mount device that combines low-input capacitance and fast switching. The ESBC™ configuration further minimizes the required driving power because it does not have Miller capacitance. The FJBE2150D provides exceptional reliability and a large operating range due to its square Reverse-BiasSafe-Operating-A...