FJB3307D

FJB3307D — High Voltage Fast Switching NPN Power Transistor March 2012 FJB3307D High Voltage Fast Switching NPN Power Transistor Features Built-in Diode between Collector and Emitter Suitable for Electronic Ballast and Switch Mode Power Supplies Internal Schematic Diagram C 1 D2-PAK 1.Base 2.Collector 3.Emitter B E Absolute Maximum Ratings Ta = 25°C unless otherwise noted Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current (DC) ICP * Collector Current (Pulse) IB Base Current (DC) IBP * Base Current (Pulse) TJ Junction Temperature TSTG Storage Temperature * Pulse Test: PW = 300μs, Duty Cycle = 2% Pulsed Value 700 400 9 8 16 4 8 150 -55 to 150 Thermal Characteristics Symbol PD Parameter Total Device Dissipation Rθja Thermal Resistance, Junction to Ambient Rθjc Thermal Resistance, Junction to Case Ta = 25°C Tc = 25°C Value 1.72 80 72.5 1.56 Units V V V A A A A °C °C Units W W °C/W °C/W © 2012 Fairchild Semiconductor Corporation FJB3307D Rev. A1 1 www.fairchildsemi.com FJB3307D — High Voltage Fast Switching NPN Power Transistor Electrical Characteristics Ta = 25°C unless otherwise noted Symbol Parameter Conditions BVCBO Collector-Base Breakdown Voltage IC = 500μA, IE = 0 BVCEO Collector-Emitter Breakdown Voltage IC = 5mA, IB = 0 BVEBO Emitter-Base Breakdown Voltage IE = 500μA, IC = 0 IEBO Emitter Cut-off Current VEB = 9V, IC = 0 hFE1 hFE2 DC Current Gain VCE = 5...