Document
FNB33060T Motion SPM 3 ® Series
March 2016
FNB33060T
Motion SPM® 3 Series
Features
• 600 V - 30 A 3-Phase IGBT Inverter with Integral Gate Drivers and Protection
• Low-Loss, Short-Circuit Rated IGBTs
• Very Low Thermal Resistance Using Al2O3 DBC Substrate
• Built-In Bootstrap Diodes and Dedicated Vs Pins Simplify PCB Layout
• Separate Open-Emitter Pins from Low-Side IGBTs for Three-Phase Current Sensing
• Single-Grounded Power Supply
• LVIC Temperature-Sensing Built-In for Temperature Monitoring
• Isolation Rating: 2500 Vrms / 1 min.
General Description
FNB33060T is an advanced Motion SPM® 3 module providing a fully-featured, high-performance inverter output stage for AC Induction, BLDC, and PMSM motors. These modules integrate optimized gate drive of the built-in IGBTs to minimize EMI and losses, while also providing multiple on-module protection features including under-voltage lockouts, over-current shutdown, thermal monitoring of drive IC, and fault reporting. The built-in, high-speed HVIC requires only a single supply voltage and translates the incoming logic-level gate inputs to the high-voltage, high-current drive signals required to properly drive the module's internal IGBTs. Separate negative IGBT terminals are available for each phase to support the widest variety of control algorithms.
Applications
• Motion Control - Home Appliance / Industrial Motor
Related Resources
• AN-9088 - Motion SPM® 3 V6 Series Users Guide
• AN-9086 - SPM 3 Package Mounting Guide
Figure 1. 3D Package Drawing (Click to Activate 3D Content)
Package Marking and Ordering Information
Device FNB33060T
Device Marking FNB33060T
Package SPM27-RA
Packing Type Rail
Quantity 10
©2016 Fairchild Semiconductor Corporation
FNB33060T Rev. 1.1
1
www.fairchildsemi.com
FNB33060T Motion SPM 3 ® Series
Integrated Power Functions
• 600 V - 30 A IGBT inverter for three-phase DC / AC power conversion (Please refer to Figure 3)
Integrated Drive, Protection and System Control Functions
• For inverter high-side IGBTs: gate drive circuit, high-voltage isolated high-speed level shifting control circuit Under-Voltage Lock-Out Protection (UVLO) Note: Available bootstrap circuit example is given in Figures 5 and 15.
• For inverter low-side IGBTs: gate drive circuit, Short-Circuit Protection (SCP) control supply circuit Under-Voltage Lock-Out Protection (UVLO)
• Fault signaling: corresponding to UVLO (low-side supply) and SC faults • Input interface: active-HIGH interface, works with 3.3 / 5 V logic, Schmitt-trigger input
Pin Configuration
Figure 2. Top View
©2016 Fairchild Semiconductor Corporation
FNB33060T Rev. 1.1
2
www.fairchildsemi.com
FNB33060T Motion SPM 3 ® Series
Pin Descriptions
Pin Number
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27
Pin Name
VDD(L) COM
IN(UL) IN(VL) IN(WL) VFO VTS CSC IN(UH) VDD(H) VB(U) VS(U) IN(VH) VDD(H) VB(V) VS(V) IN(WH) VDD(H) VB(W) VS(W)
NU NV NW U
V
W
P
Pin Description
Low-Side Common Bias Voltage for IC and IGBTs Driving Common Supply Ground Signal Input for Low-Side U-Phase Signal Input for Low-Side V-Phase Signal Input for Low-Side W-Phase Fault Output Output for LVIC Temperature Sensing Voltage Output Shut Down Input for Short-Circuit Current Detection Input Signal Input for High-Side U-Phase High-Side Common Bias Voltage for IC and IGBTs Driving High-Side Bias Voltage for U-Phase IGBT Driving High-Side Bias Voltage Ground for U-Phase IGBT Driving Signal Input for High-Side V-Phase High-Side Common Bias Voltage for IC and IGBTs Driving High-Side Bias Voltage for V-Phase IGBT Driving High-Side Bias Voltage Ground for V Phase IGBT Driving Signal Input for High-Side W-Phase High-Side Common Bias Voltage for IC and IGBTs Driving High-Side Bias Voltage for W-Phase IGBT Driving High-Side Bias Voltage Ground for W-Phase IGBT Driving Negative DC-Link Input for U-Phase Negative DC-Link Input for V-Phase Negative DC-Link Input for W-Phase Output for U-Phase Output for V-Phase Output for W-Phase Positive DC-Link Input
©2016 Fairchild Semiconductor Corporation
FNB33060T Rev. 1.1
3
www.fairchildsemi.com
FNB33060T Motion SPM 3 ® Series
Internal Equivalent Circuit and Input/Output Pins
(19) VB(W) (18) VDD(H) (17) IN(WH) (20) VS(W)
(15) VB(V) (14) VDD(H)
(13) IN(VH) (16) VS(V)
(11) VB(U) (10) VDD(H)
(9) IN(UH) (12) VS(U)
VB VDD COM IN
VB VDD COM IN
VB VDD COM IN
OUT VS
OUT VS
OUT VS
P (27) W (26) V (25) U (24)
(8) CSC (7) VTS (6) VFO
(5) IN(WL) (4) IN(VL) (3) IN(UL) (2) COM (1) VDD(L)
CSC VTS VFO
IN IN IN COM VDD
OUT OUT OUT
NW (23) NV (22) NU (21)
Figure 3. Internal Block Diagram
Notes: 1. Inverter low-side is composed of three IGBTs, freewheeling diodes for each IGBT, and one control IC. It has gate drive and protection functions. 2. Inverter power side is composed of four inverter DC-link input terminals and three inverter output terminals. 3. Inverter high-side is composed of three IGBTs, freewheeling diodes, and three drive ICs for each IGBT.
©2016 Fairchil.