IGBT Module
MITSUBISHI IGBT MODULES
CM50TU-24F
HIGH POWER SWITCHING USE
CM50TU-24F
¡IC .............................................
Description
MITSUBISHI IGBT MODULES
CM50TU-24F
HIGH POWER SWITCHING USE
CM50TU-24F
¡IC ..................................................................... 50A ¡VCES ......................................................... 1200V ¡Insulated Type ¡6-elements in a pack
APPLICATION General purpose inverters & Servo controls, etc
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
102 80 ±0.25 20 4–φ5.5 MOUNTING HOLES (4)
CM N
11 19.1
E G
P
11
E
19.1
G
11 11.85
E
GuN EuN GvN EvN GwN EwN
GuP EuP
G
74 ±0.25
91
GvP EvP GwP EwP
U V W
G E G E G E
39.3
18.7
1.25
10
10
5–M4NUTS Tc measured point 2.8
10
11
20 19.1
10
20 11
10
1.25
0.5
3.05 11 4 Tc measured point
P
29 –0.5
+1
19.1
7.1
8.1
GUP RTC EUP U
GVP RTC EVP GVN RTC EVN V
GWP RTC EWP GWN RTC EWN W
LABEL
26
GUN RTC EUN N
CIRCUIT DIAGRAM
Aug. 1999
MITSUBISHI IGBT MODULES
CM50TU-24F
HIGH POWER SWITCHING USE
MAXIMUM RATINGS (Tj = 25°C)
Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso — — Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight G-E Short C-E Short TC = 25°C Pulse TC = 25°C Pulse TC = 25°C Conditions Ratings 1200 ±20 50 100 50 100 320 –40 ~ +150 –40 ~ +125 2500 1.3 ~ 1.7 2.5 ~ 3.5 570 Unit V V A A W °C °C V Nm Nm g
(Note 2) (Note 2)
Main terminal to base plate, AC 1 min. Main Terminal M4 Mounting holes M5 Typical va...
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