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CM50TU-24F

Mitsubishi Electric Semiconductor

IGBT Module

MITSUBISHI IGBT MODULES CM50TU-24F HIGH POWER SWITCHING USE CM50TU-24F ¡IC .............................................


Mitsubishi Electric Semiconductor

CM50TU-24F

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MITSUBISHI IGBT MODULES CM50TU-24F HIGH POWER SWITCHING USE CM50TU-24F ¡IC ..................................................................... 50A ¡VCES ......................................................... 1200V ¡Insulated Type ¡6-elements in a pack APPLICATION General purpose inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 102 80 ±0.25 20 4–φ5.5 MOUNTING HOLES (4) CM N 11 19.1 E G P 11 E 19.1 G 11 11.85 E GuN EuN GvN EvN GwN EwN GuP EuP G 74 ±0.25 91 GvP EvP GwP EwP U V W G E G E G E 39.3 18.7 1.25 10 10 5–M4NUTS Tc measured point 2.8 10 11 20 19.1 10 20 11 10 1.25 0.5 3.05 11 4 Tc measured point P 29 –0.5 +1 19.1 7.1 8.1 GUP RTC EUP U GVP RTC EVP GVN RTC EVN V GWP RTC EWP GWN RTC EWN W LABEL 26 GUN RTC EUN N CIRCUIT DIAGRAM Aug. 1999 MITSUBISHI IGBT MODULES CM50TU-24F HIGH POWER SWITCHING USE MAXIMUM RATINGS (Tj = 25°C) Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso — — Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight G-E Short C-E Short TC = 25°C Pulse TC = 25°C Pulse TC = 25°C Conditions Ratings 1200 ±20 50 100 50 100 320 –40 ~ +150 –40 ~ +125 2500 1.3 ~ 1.7 2.5 ~ 3.5 570 Unit V V A A W °C °C V Nm Nm g (Note 2) (Note 2) Main terminal to base plate, AC 1 min. Main Terminal M4 Mounting holes M5 Typical va...




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