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TBD62064AFAG Dataheets PDF



Part Number TBD62064AFAG
Manufacturers Toshiba
Logo Toshiba
Description 4-channel high current sink type DMOS transistor array
Datasheet TBD62064AFAG DatasheetTBD62064AFAG Datasheet (PDF)

TBD62064AFAG TOSHIBA BiCD Integrated Circuit Silicon Monolithic TBD62064AFAG 4channel high current sink type DMOS transistor array TBD62064AFAG are DMOS transistor array with 4 circuits. It has a clamp diode for switching inductive loads built-in in each output. Please be careful about thermal conditions during use. Features • 4 circuits built-in • High voltage • High current : VOUT = 50 V (MAX) : IOUT = 1.5 A/ch (MAX) • Input voltage(output on): 2.5 V (MIN) • Input voltage(output off) :.

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TBD62064AFAG TOSHIBA BiCD Integrated Circuit Silicon Monolithic TBD62064AFAG 4channel high current sink type DMOS transistor array TBD62064AFAG are DMOS transistor array with 4 circuits. It has a clamp diode for switching inductive loads built-in in each output. Please be careful about thermal conditions during use. Features • 4 circuits built-in • High voltage • High current : VOUT = 50 V (MAX) : IOUT = 1.5 A/ch (MAX) • Input voltage(output on): 2.5 V (MIN) • Input voltage(output off) : 0.6 V (MAX) • Package : P-SSOP24-0613-1.00-001 P-SSOP24-0613-1.00-001 Weight: 0.35 g (Typ.) Pin connection (top view) O4 NC I4 NC GND GND GND GND NC I3 NC O3 24 23 22 21 20 19 18 17 16 15 14 13 1 2 3 4 5 6 7 8 9 10 11 12 COMMON O1 I1 NC GND GND GND GND NC I2 O2 COMMON Pin connection may be simplified for explanatory purpose. ©2016 TOSHIBA Corporation 1 2016-03-08 Pin explanations TBD62064AFAG Pin No. Pin name 1 COMMON 2 O1 3 I1 4 NC 5 GND 6 GND 7 GND 8 GND 9 NC 10 I2 11 O2 12 COMMON 13 O3 14 NC 15 I3 16 NC 17 GND 18 GND 19 GND 20 GND 21 NC 22 I4 23 NC 24 O4 Function Common pin Output pin 1 Input pin 1 Non-connection pin GND pin GND pin GND pin GND pin Non-connection pin Input pin 2 Output pin 2 Common pin Output pin 3 Non-connection pin Input pin 3 Non-connection pin GND pin GND pin GND pin GND pin Non-connection pin Input pin 4 Non-connection pin Output pin 4 Equivalent circuit INPUT Clamp diode Clamp Circuit COMMON OUTPUT Equivalent circuit may be simplified for explanatory purpose. 2 2016-03-08 Absolute Maximum Ratings (Ta = 25°C) TBD62064AFAG Characteristics Symbol Rating Unit Output voltage VOUT 50 V COMMON pin voltage VCOM −0.5 to 50 V Output current IOUT 1.5 A/ch Input voltage VIN −0.5 to 30 V Clamp diode reverse voltage VR 50 V Clamp diode forward current IF 1.5 A Power dissipation PD 0.9 (Note 1) / 1.4 (Note 2) W Operating temperature Topr −40 to 85 °C Storage temperature Tstg −55 to 150 °C Note 1: Device alone. When Ta exceeds 25°C, it is necessary to do the derating with 7.2 mW/°C. Note 2: On PCB (Size: 60 mm × 30 mm × 1.6 mm, Cu area: 30%, single-side glass epoxy). When Ta exceeds 25°C, it is necessary to do the derating with 11.2 mW/°C. Operating Ranges (Ta = −40 to 85°C unless otherwise noted) Characteristics Symbol Condition Min Typ. Max Unit Output voltage VOUT ― ― ― 50 V COMMON pin voltage VCOM ― 0 ― 50 V 1 circuit ON, Ta = 25°C 0 ― 1250 Output current (Note 1) IOUT tpw = 25 ms Duty = 10% 0 ― 990 4 circuits ON mA/ch Ta = 85°C Duty = 50% 0 ― 440 Tj = 120°C Input voltage (Output on) VIN (ON) IOUT = 100 mA or upper, VOUT = 2 V 2.5 ― 25 V Input voltage (Output off) VIN (OFF) IOUT = 100 μA or less, VOUT = 2 V 0 ― 0.6 V Clamp diode forward current IF ― ― ― 1.25 Note 1: On PCB (Size: 60 mm × 30 mm × 1.6 mm, Cu area: 30%, single-side glass epoxy). A 3 2016-03-08 TBD62064AFAG Electrical Characteristics (Ta = 25°C unless otherwise noted) Characteristics Symbol Test Circuit Condition Min Typ. Max Output leakage current Ileak 1 VIN = 0 V, VOUT = 50V Ta = 85°C ― ― 1.0 Output voltage (Output ON-resistance) VDS (RON) IOUT = 1.25 A, VIN = 5.0 V ― 0.56 1.25 (0.45) (1.0) 2 IOUT = 0.75 A, VIN = 5.0 V ― 0.32 0.75 (0.43) (1.0) Input current (Output on) IIN (ON) 3 VIN = 2.5 V ― ― 0.2 Input current (Output off) IIN (OFF) 4 VIN = 0 V, Ta = 85°C ― Input voltage (Output on) VIN (ON) 5 IOUT =100 mA or upper, VOUT = 2 V ― Clamp diode reverse current Clamp diode forward voltage IR 6 VR = 50 V, Ta = 85°C VF 7 IF = 1.25 A ― ― ― 1.0 ― 2.5 ― 1.0 ― 2.0 Turn−on delay Turn−off delay tON VOUT = 50 V 8 RL = 42 Ω tOFF CL = 15 pF ― 1.0 ― ― 1.7 ― Unit μA V (Ω) mA μA V μA V μs 4 2016-03-08 Test circuit 1. Ileak INPUT 3. IIN (ON) GND INPUT IIN(ON) VIN GND COMMON OUTPUT Ileak VOUT COMMON OUTPUT TBD62064AFAG 2. VDS (RON) INPUT VIN 4. IIN (OFF) INPUT IIN(OFF) COMMON GND OUTPUT IOUT VDS RON = VDS / IOUT GND COMMON OUTPUT 5. VIN (ON) INPUT VIN(ON) GND COMMON OUTPUT IOUT VOUT 6. IR INPUT GND COMMON IR VR OUTPUT 7. VF INPUT GND COMMON IF VF OUTPUT Test circuit and timing chart may be simplified for explanatory purpose. 5 2016-03-08 8. tON, tOFF (Note 1) TBD62064AFAG (Note 2) 50μs Note 1: Pulse width 50 μs, Duty cycle 10% Output impedance 50 Ω, tr ≤ 5 ns, tf ≤ 10 ns, VIH = 5.0V Note 2: CL includes the probe and the test board capacitance. Test circuit and timing chart may be simplified for explanatory purpose. Precautions for Using (1) This IC does not include built-in protection circuits for excess current or overvoltage. Therefore, if the short−circuit between adjacent pins or between outputs, the short-to-power or ground fault has occurred, the current or voltage beyond the absolute maximum rating is impressed, and IC destroys. When designing, please consider enough in power supply line, output line and GND line. In addition, so as not to continue to flow a current that exceeds the abso.


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