JCS19N20

R JCS19N20 MAIN CHARACTERISTICS ID VDSS Rdson（@Vgs=10V） Qg 18.0A 200 V 0.18Ω 47nC Package N N- CHANNEL MOSFET    UPS APPLICATIONS  High efficiency switch mode power supplies  Electronic lamp ballasts based on half bridge  UPS   Crss ( 48pF)    dv/dt RoHS FEATURES Low gate charge Low Crss (typical 48pF ) Fast switching 100% avalanche tested Improved dv/dt capability RoHS product ORDER MESSAGE Order codes JCS19N20C-O-C-N-B JCS19N20F-O-S-N- B Marking Package Halogen Free Packaging JCS19N20C TO-220C JCS19N20F TO-220MF NO NO Tube Tube Device Weight 2.15 g(typ) 2.20 g(typ) ：201503D 1/11 R ABSOLUTE RATINGS (Tc=25℃) JCS19N20 Value JCS19N20C JCS19N20F Parameter Symbol Unit － Drain-Source Voltage VDSS 200 V Drain Current -continuous ID T=25℃ T=100℃ 18.0 11.4 18.0* 11.4* A A （ 1） Drain Current -pulse （note 1） Gate-Source Voltage IDM VGSS 72 ±30 72* A V （ 2） Single Pulsed Avalanche Energy（note 2） （ 1） Avalanche Current （note 1） EAS IAR 259 mJ 18 A （ 1） Repetitive Avalanche Current （note 1） （ 3） Peak Diode Recovery dv/dt （note 3） EAR dv/dt 14 mJ 5.5 V/ns Power Dissipation PD TC=25℃ -Derate above 25℃ 140 1.12 44 W 0.35 W/℃ Operating and Storage Temperature Range TJ，TSTG -55～+150 ℃ Maximum Lead Temperature for Soldering TL Purposes 300 ℃ * *Drain current limited by maximum junction temperature ：201505E 2/10 R ELECTRICAL CHARACTERISTIC JCS19N20 Parameter Off –Characteristic...