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TCR2DG31 Dataheets PDF



Part Number TCR2DG31
Manufacturers Toshiba
Logo Toshiba
Description Low Noise 200 mA CMOS Low Drop-Out Regulator
Datasheet TCR2DG31 DatasheetTCR2DG31 Datasheet (PDF)

TCR2DG series TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TCR2DG series Low Noise 200 mA CMOS Low Drop-Out Regulator in ultra small package The TCR2DG series are CMOS general-purpose single-output voltage regulators with an on/off control input, featuring low dropout voltage, low quiescent bias current and fast load transient response. These voltage regulators are available in fixed output voltages between 1.2 V and 3.6 V and capable of driving up to 200 mA. They feature over.

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TCR2DG series TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TCR2DG series Low Noise 200 mA CMOS Low Drop-Out Regulator in ultra small package The TCR2DG series are CMOS general-purpose single-output voltage regulators with an on/off control input, featuring low dropout voltage, low quiescent bias current and fast load transient response. These voltage regulators are available in fixed output voltages between 1.2 V and 3.6 V and capable of driving up to 200 mA. They feature overcurrent protection and thermal shut down function. The TCR2DG series is offered in the ultra small package WCSP4 ( 0.79 mm x 0.79 mm x 0.5 mm). It has a low dropout voltage of 75 mV ( 2.5 V output, IOUT = 100 mA) with low output noise voltage of 18 μVrms (2.5 V output) and a load transient response of only ⊿VOUT = ±65 mV ( IOUT = 1 mA⇔150 mA, COUT =1.0 μF). As small ceramic input and output capacitors can be used with the Weight : 0.7 mg (typ.) WCSP4 TCR2DG series, these devices are ideal for portable applications that require high-density board assembly such as cellular phones. Features • Low Drop-out Voltage ( VIN-VOUT = 75 mV (typ.) at 2.5 V-output, IOUT = 100 mA ) • Low quiescent bias current ( IB = 45 μA (typ.) at IOUT = 0 mA ) • Low stand-by current ( IB(OFF) = 0.1 μA (typ.) at Stand-by mode ) • Low output noise voltage VNO = 22 μVrms (typ.) at 3.0 V-output, IOUT = 10 mA, 10 Hz < f < 100 kHz VNO = 18 μVrms (typ.) at 2.5 V-output, IOUT = 10 mA, 10 Hz < f < 100 kHz VNO = 14 μVrms (typ.) at 1.2 V-output, IOUT = 10 mA, 10 Hz < f < 100 kHz • High ripple rejection ratio R.R = 75 dB (typ.) at 2.5 V-output, IOUT = 10 mA, f =1kHz R.R = 62 dB (typ.) at 2.5 V-output, IOUT = 10 mA, f =10kHz R.R = 50 dB (typ.) at 2.5 V-output, IOUT = 10 mA, f =100kHz • Fast load transient response (⊿VOUT = ±65 mV (typ.) at IOUT = 1mA ⇔ 150 mA, COUT =1.0 μF ) • Output voltage accuracy ±1.0 % • Over current protection • Thermal shut down function • Built-in inrush current reduction circuit • Pull down connection between CONTROL and GND • Ceramic capacitors can be used ( CIN = 0.47μF, COUT =1.0 μF ) • Ultra small package, WCSP4 ( 0.79 mm x 0.79 mm x 0.50 mm ) Pin Assignment (top view) CONTROL (A2) VIN (B2) GND (A1) VOUT (B1) 1 Start of commercial production 2013-01 2014-03-01 Absolute Maximum Ratings (Ta = 25°C) TCR2DG series Characteristics Symbol Rating Unit Input voltage Control voltage Output voltage Output current Power dissipation Operation temperature range Junction temperature Storage temperature range VIN VCT VOUT IOUT PD Topr Tj Tstg 6.0 -0.3 to 6.0 -0.3 to VIN + 0.3 200 800 (Note1) −40 to 85 150 −55 to150 V V V mA mW °C °C °C Note: Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the a.


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