AP4951GM

Advanced Power Electronics Corp. AP4951GM RoHS-compliant Product P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Low Gate Charge ▼ Fast Switching Performance Description D2 D2 D1 D1 SO-8 G2 S2 G1 S1 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G1 The SO-8 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. BVDSS RDS(ON) ID D1 G2 S1 -60V 96mΩ -3.4A D2 S2 Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor TSTG TJ Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient3 Rating -60 ±20 -3.4 -2.7 -20 2 0.016 -55 to 150 -55 to 150 Value 62.5 Units V V A A A W W/℃ ℃ ℃ Unit ℃/W Data and specifications subject to change without notice 201108073-1/4 AP4951GM Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS ΔBVDSS/ΔTj RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Drain-Source Breakdown Voltage VGS=0V, ID=-250uA Breakdown Voltage Temperatur...