AP5523GM-HF

Advanced Power Electronics Corp. AP5523GM-HF Halogen-Free Product N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Low Gate Charge ▼ Fast Switching Performance D2 D2 D1 D1 ▼ RoHS Compliant & Halogen-Free SO-8 G2 S2 G1 S1 Description AP5523 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The SO-8 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications. N-CH P-CH G1 BVDSS RDS(ON) ID BVDSS RDS(ON) ID D1 G2 S1 100V 260mΩ 2A -100V 160mΩ -2.5A D2 S2 Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Drain Current3, VGS @ 10V Drain Current3, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Rating N-channel P-channel 100 -100 +20 +20 2.0 -2.5 1.5 -2.0 8 -10 2 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient3 Data and specifications subject to change without notice Value 62.5 Unit ℃/W 1 201310041 AP5523GM-HF N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol P...