Document
MMBT7002K
N-Channel Enhancement Mode Field Effect Transistor
Features • Low on resistance RDS(ON) • Low gate threshold voltage
• Low input capacitance • ESD protected up to 2KV
Drain
Gate
Source
1.Gate 2.Source 3.Drain SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Continuous)
Drain Current (Pulse Width ≤ 10 µs)
Total Power Dissipation
Operating and Storage Temperature Range
Characteristics at Ta = 25 OC Parameter
Drain Source Breakdown Voltage at ID = 10 µA Zero Gate Voltage Drain Current at VDS = 60 V Gate-Source Leakage Current at VGS = ± 20 V Gate Threshold Voltage at VDS = 10 V, ID = 250 µA Static Drain-Source On-Resistance at VGS = 10 V, ID = 500 mA at VGS = 5 V, ID = 50 mA Forward Transconductance at VDS = 10 V, ID = 200 mA Input Capacitance at VDS = 25 V, f = 1 MHz Output Capacitance at VDS = 25 V, f = 1 MHz Reverse Transfer Capacitance at VDS = 25 V, f = 1 MHz
Symbol
VDSS VGSS
ID IDM Ptot TJ, Ts
Value 60 ± 20 300 800 350
- 55 to + 150
Unit V V mA mA
mW OC
Symbol BVDSS
IDSS IGSS VGS(th)
RDS(ON)
gfs Ciss Coss Crss
Min. 60 1
80 -
Max. 1
± 10 2.5
2 3 50 25 5
Unit V µA µA V
Ω
mS pF pF pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated: 04/04/2008
MMBT7002K
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated: 04/04/2008
.