K2900-01

> Features - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - Avalanche Rated 2SK2900-01 FAP-IIIB Series N-channel MOS-FET 60V 14,5mΩ ±45A 60W > Outline Drawing > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Symbol Rating Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Maximum Avalanche Energy Max. Power Dissipation Operating and Storage Temperature Range V DS ID I D(puls) V GS E AV PD T ch T stg 60 ±45 ±180 ±30 461.9 60 150 -55 ~ +150 * L=0,304mH, VCC=24V Unit V A A V mJ* W °C °C - Electrical Characteristics (TC=25°C), unless otherwise specified Item Symbol Test conditions Drain-Source Breakdown-Voltage BV DSS ID=1mA VGS=0V Gate Threshhold Voltage V GS(th) ID=10mA VDS=VGS Zero Gate Voltage Drain Current I DSS VDS=60V Tch=25°C VGS=0V Tch=125°C Gate Source Leakage Current I GSS VGS=30V VDS=0V Drain Source On-State Resistance R DS(on) ID=22.5A VGS=10V Forward Transconductance g fs ID=22.5A VDS=25V Input Capacitance C iss VDS=25V Output Capacitance C oss VGS=0V Reverse Transfer Capacitance C rss f=1MHz Turn-On-Time ton (ton=td(on)+tr) Turn-Off-Time toff (ton=td(off)+tf) t d(on) tr t d(off) VCC=30V VGS=10V ID=45A Avalanche Capability t f RGS=10 Ω I AV L = 100µH Tch=25°C Diode Forward On-Voltage V SD IF=45A VGS=...