IGBT Module
MITSUBISHI IGBT MODULES
CM600HU-12H
HIGH POWER SWITCHING USE INSULATED TYPE
A B E J F C D G E G E C CM H K L M (4 - Mo...
Description
MITSUBISHI IGBT MODULES
CM600HU-12H
HIGH POWER SWITCHING USE INSULATED TYPE
A B E J F C D G E G E C CM H K L M (4 - Mounting Holes)
2 - M4 NUTS
2 - M8 NUTS TC Measured Point
P
N
Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT in a single configuration with a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: ٗ Low Drive Power ٗ Low VCE(sat) ٗ Discrete Super-Fast Recovery Free-Wheel Diode ٗ High Frequency Operation ٗ Isolated Baseplate for Easy Heat Sinking Applications: ٗ AC Motor Control ٗ Motion/Servo Control ٗ UPS ٗ Welding Power Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM600HU-12H is a 600V (VCES), 600 Ampere Single IGBT Module.
Type CM Current Rating Amperes 600 VCES Volts (x 50) 12
E
C
E G
Outline Drawing and Circuit Diagram Dimensions A B C D E F G Inches 4.21 3.66±0.01 2.44 1.89±0.01 0.53 0.49 0.39 Millimeters 107.0 93.0±0.25 62.0 48.0±0.25 13.5 12.55 10.0 Dimensions H J K L M N P Inches 1.02 0.37 1.14 0.81 0.26 Dia. 1.34 +0.04/-0.02 1.02 +0.04/-0.02 Millimeters 26.0 9.5 29.0 20.5 6.5 Dia. 34 +1.0/-0.5 26 +1.0/-0.5
Sep.1998
MITSUBISHI IGBT MODULES
CM600HU-12H
HIGH POWER SWITCHING USE INSULATED TYPE Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings ...
Similar Datasheet
- CM600HU-12F IGBT Module - Mitsubishi Electric Semiconductor
- CM600HU-12F IGBT Module - Powerex Power Semiconductors
- CM600HU-12H IGBT Module - Mitsubishi Electric Semiconductor
- CM600HU-12H IGBT Module - Powerex Power Semiconductors