Main Product Characteristics:
VDSS RDS(on)
650V 1.26Ω (typ.)
ID 7A
Features and Benefits:
TO220F
Advanced Proces...
Main Product Characteristics:
VDSS RDS(on)
650V 1.26Ω (typ.)
ID 7A
Features and Benefits:
TO220F
Advanced Process Technology Special designed for PWM, load switching and
general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150℃ operating temperature
SSF7N65F
Marking and pin Assignment
Schematic diagram
Description:
These N-Channel enhancement mode power field effect
transistors are produced using silikron proprietary MOSFET technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.
Absolute max Rating:
Symbol ID @ TC = 25°C ID @ TC = 100°C IDM
PD @TC = 25°C
VDS VGS EAS IAS TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current ② Power Dissipation ③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=10mH Avalanche Current @ L=10mH Operating Junction and Storage Temperature Range
Max. 7① 4.4 ① 28 52 0.42 650 ± 30 353 8.4 -55 to +150
Units
A
W W/°C
V V mJ A °C
©Silikron Semiconductor CO.,LTD.
2013.04.25 www.silikron.com
Version : 1.2
page 1 of 8
SSF7N65F
Thermal Resistance
Symbol RθJC
RθJA
Characterizes Junction-to-case ③ Junction-to-ambient (t ≤ 10s) ④ Jun...