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SSF7NS65UF Dataheets PDF



Part Number SSF7NS65UF
Manufacturers SILIKRON
Logo SILIKRON
Description N-Channel MOSFET
Datasheet SSF7NS65UF DatasheetSSF7NS65UF Datasheet (PDF)

Main Product Characteristics: VDSS RDS(on) 650V 0.6Ω (typ.) ID 7A ① Features and Benefits: TO-220F  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge  Low gate input resistance SSF7NS65UF Marking and pin Assignment Schematic diagram Description: The SSF7NS65UF series MOSFETs is a new technology, which combines an innovative super junction technology and advance process. This new technology achieves low Rdson, energy saving, high rel.

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Main Product Characteristics: VDSS RDS(on) 650V 0.6Ω (typ.) ID 7A ① Features and Benefits: TO-220F  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge  Low gate input resistance SSF7NS65UF Marking and pin Assignment Schematic diagram Description: The SSF7NS65UF series MOSFETs is a new technology, which combines an innovative super junction technology and advance process. This new technology achieves low Rdson, energy saving, high reliability and uniformity, superior power density and space saving. Absolute max Rating: Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS EAS IAS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current ② Power Dissipation ③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=100mH Avalanche Current @ L=100mH Operating Junction and Storage Temperature Range Max. 7① 5① 28 33 0.264 650 ± 30 98 1.4 -55 to +150 Units A W W/°C V V mJ A °C ©Silikron Semiconductor CO.,LTD. 2013.04.27 www.silikron.com Version : 1.0 page 1 of 8 SSF7NS65UF Thermal Resistance Symbol RθJC RθJA Characterizes Junction-to-case ③ Junction-to-ambient (t ≤ 10s) ④ Typ. — — Max. 3.8 80 Units ℃/W ℃/W Electrical Characterizes @TA=25℃ unless otherwise specified Symbol V(BR)DSS RDS(on) VGS(th) IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-to-Source breakdown voltage Static Drain-to-Source on-resistance Gate threshold voltage Drain-to-Source leakage current Gate-to-Source forward leakage Total gate charge Gate-to-Source charge Gate-to-Drain("Miller") charge Turn-on delay time Rise time Turn-Off delay time Fall time Input capacitance Output capacitance Reverse transfer capacitance Min. 650 — — — — 2 — — — — — — — — — — — — — — — Typ. — 0.6 1.3 0.64 1.5 — 2.2 — — — — 13 2.6 3.1 12 7.5 30 18 500 24 3 Max. — 0.75 — 0.9 — 4 — 1 50 100 -100 — — — — — — — — — — Units V Ω Ω V μA nA nC Conditions VGS = 0V, ID = 250μA VGS=10V,ID = 1A TJ = 125°C VGS=10V,ID = 2.8A TJ = 125°C VDS = VGS, ID = 250μA TJ = 125°C VDS =650V,VGS = 0V TJ = 125°C VGS =30V VGS = -30V ID = 5A, VDS=200V, VGS = 10V VGS=10V, VDS =400V, ns RGEN=10.2Ω,ID =1.5A VGS = 0V pF VDS = 100V ƒ = 1MHz Source-Drain Ratings and Characteristics Symbol IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. — Typ. — Max. 7① — — 28 — 0.8 1.2 — 126 — — 560 — Units A A V nS nC Conditions MOSFET symbol showing the integral reverse p-n junction diode. IS=2.8A, VGS=0V TJ = 25°C, IF = 1.5A, di/dt = 100A/μs ©Silikron Semiconductor CO.,LTD. 2013.04.27 www.silikron.com Version : 1.0 page 2 of 8 Test circuits and Waveforms SSF7NS65UF Switch Waveforms: Notes: ①Calculated continuous current based on maximum allowable junction temperature. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal resistance. ④The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C ©Silikron Semiconductor CO.,LTD. 2013.04.27 www.silikron.com Version : 1.0 page 3 of 8 Typical electrical and thermal characteristics SSF7NS65UF Figure 1: Typical Output Characteristics Figure 2. Gate to source cut-off voltage Figure 3. Drain-to-Source Breakdown Voltage Vs. Case Temperature Figure 4: Normalized On-Resistance Vs. Case Temperature ©Silikron Semiconductor CO.,LTD. 2013.04.27 www.silikron.com Version : 1.0 page 4 of 8 Typical electrical and thermal characteristics SSF7NS65UF Figure 5. Maximum Drain Current Vs. Case Temperature Figure 6. Typical Capacitance Vs. Drain-to-Source Voltage Figure7.Drain-to-Source Voltage Vs. Gate-to-Source Voltage ©Silikron Semiconductor CO.,LTD. 2013.04.27 www.silikron.com Version : 1.0 page 5 of 8 Mechanical Data: TO220F PACKAGE OUTLINE DIMENSION_GN SSF7NS65UF Symbol E E1 E2 A A1 A2 A3 c D D1 H1 e ФP ФP1 ФP2 ФP3 L L1 L2 Q1 Q2 b1 b2 b3 Dimension In Millimeters Min 9.960 9.840 6.800 4.600 2.440 2.660 0.600 15.780 8.970 6.500 Nom 10.160 10.040 7.000 4.700 2.540 2.760 0.700 0.500 15.870 9.170 6.700 2.54BSC Max 10.360 10.240 7.200 4.800 2.640 2.860 0.800 15.980 9.370 6.800 3.080 3.180 3.280 1.400 1.500 1.600 0.900 1.000 1.100 0.100 0.200 0.300 12.780 2.970 0.830 3o 43o 1.180 0.760 - 12.980 3.170 0.930 5o 45o 1.280 0.800 - 13.180 3.370 1.030 7o 47o 1.380 0.840 1.420 Dimension In Inches Min 0.392 0.387 0.268 0.181 0.096 0.105 0.024 0.621 0.353 0.256 Nom 0.400 0.395 0.276 0.185 0.100 0.109 0.028 0.020 0.625 0.361 0.264 0.10BSC Max 0.408 0.403 0.283 0.189 0.104 0.113 0.031 0.629 0.369 0.268 0.121 0.125 0.129 0.055 0.059 0.063 0.035 0.039 0.043 0.004 0.008 0.012 0.503 0.117 0.033 3o 43o 0.046 0..


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