Document
Main Product Characteristics:
VDSS RDS(on)
650V 0.6Ω (typ.)
ID 7A ①
Features and Benefits:
TO-220F
High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance
SSF7NS65UF
Marking and pin Assignment
Schematic diagram
Description:
The SSF7NS65UF series MOSFETs is a new technology, which combines an innovative super junction technology and advance process. This new technology achieves low Rdson, energy saving, high reliability and uniformity, superior power density and space saving.
Absolute max Rating:
Symbol ID @ TC = 25°C ID @ TC = 100°C IDM
PD @TC = 25°C
VDS VGS EAS IAS TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current ② Power Dissipation ③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=100mH Avalanche Current @ L=100mH Operating Junction and Storage Temperature Range
Max. 7① 5① 28 33 0.264 650 ± 30 98 1.4 -55 to +150
Units
A
W W/°C
V V mJ A °C
©Silikron Semiconductor CO.,LTD.
2013.04.27 www.silikron.com
Version : 1.0
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SSF7NS65UF
Thermal Resistance
Symbol RθJC RθJA
Characterizes Junction-to-case ③ Junction-to-ambient (t ≤ 10s) ④
Typ. — —
Max. 3.8 80
Units ℃/W ℃/W
Electrical Characterizes @TA=25℃ unless otherwise specified
Symbol V(BR)DSS
RDS(on)
VGS(th)
IDSS
IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Parameter Drain-to-Source breakdown voltage
Static Drain-to-Source on-resistance
Gate threshold voltage
Drain-to-Source leakage current
Gate-to-Source forward leakage Total gate charge Gate-to-Source charge Gate-to-Drain("Miller") charge Turn-on delay time Rise time Turn-Off delay time Fall time Input capacitance Output capacitance Reverse transfer capacitance
Min.
650 — — — —
2 — — — — — — — — — — — — — — —
Typ. — 0.6 1.3 0.64 1.5 — 2.2 — — — — 13 2.6 3.1 12 7.5 30 18 500 24 3
Max. — 0.75 — 0.9 — 4 — 1 50 100
-100 — — — — — — — — — —
Units V Ω Ω V μA nA
nC
Conditions VGS = 0V, ID = 250μA VGS=10V,ID = 1A TJ = 125°C VGS=10V,ID = 2.8A TJ = 125°C VDS = VGS, ID = 250μA TJ = 125°C VDS =650V,VGS = 0V TJ = 125°C VGS =30V VGS = -30V ID = 5A, VDS=200V, VGS = 10V
VGS=10V, VDS =400V, ns
RGEN=10.2Ω,ID =1.5A
VGS = 0V pF VDS = 100V
ƒ = 1MHz
Source-Drain Ratings and Characteristics
Symbol IS
ISM VSD trr Qrr
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min. —
Typ. —
Max. 7①
— — 28
— 0.8 1.2 — 126 — — 560 —
Units A
A V nS nC
Conditions MOSFET symbol showing the integral reverse p-n junction diode. IS=2.8A, VGS=0V TJ = 25°C, IF = 1.5A, di/dt = 100A/μs
©Silikron Semiconductor CO.,LTD.
2013.04.27 www.silikron.com
Version : 1.0
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Test circuits and Waveforms
SSF7NS65UF
Switch Waveforms:
Notes:
①Calculated continuous current based on maximum allowable junction temperature. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance. ④The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
©Silikron Semiconductor CO.,LTD.
2013.04.27 www.silikron.com
Version : 1.0
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Typical electrical and thermal characteristics
SSF7NS65UF
Figure 1: Typical Output Characteristics
Figure 2. Gate to source cut-off voltage
Figure 3. Drain-to-Source Breakdown Voltage Vs. Case Temperature
Figure 4: Normalized On-Resistance Vs. Case Temperature
©Silikron Semiconductor CO.,LTD.
2013.04.27 www.silikron.com
Version : 1.0
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Typical electrical and thermal characteristics
SSF7NS65UF
Figure 5. Maximum Drain Current Vs. Case Temperature
Figure 6. Typical Capacitance Vs. Drain-to-Source Voltage
Figure7.Drain-to-Source Voltage Vs. Gate-to-Source Voltage
©Silikron Semiconductor CO.,LTD.
2013.04.27 www.silikron.com
Version : 1.0
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Mechanical Data:
TO220F PACKAGE OUTLINE DIMENSION_GN
SSF7NS65UF
Symbol
E E1 E2 A A1 A2 A3 c D D1 H1 e ФP ФP1 ФP2 ФP3 L L1 L2 Q1
Q2 b1 b2 b3
Dimension In Millimeters
Min 9.960 9.840 6.800 4.600 2.440 2.660 0.600
15.780 8.970 6.500
Nom 10.160 10.040 7.000 4.700 2.540 2.760 0.700 0.500 15.870 9.170 6.700 2.54BSC
Max 10.360 10.240 7.200 4.800 2.640 2.860 0.800
15.980 9.370 6.800
3.080
3.180
3.280
1.400
1.500
1.600
0.900
1.000
1.100
0.100
0.200
0.300
12.780 2.970 0.830
3o 43o 1.180 0.760
-
12.980 3.170 0.930
5o 45o 1.280 0.800
-
13.180 3.370 1.030
7o 47o 1.380 0.840 1.420
Dimension In Inches
Min 0.392 0.387 0.268 0.181 0.096 0.105 0.024
0.621 0.353 0.256
Nom 0.400 0.395 0.276 0.185 0.100 0.109 0.028 0.020 0.625 0.361 0.264 0.10BSC
Max 0.408 0.403 0.283 0.189 0.104 0.113 0.031
0.629 0.369 0.268
0.121
0.125
0.129
0.055
0.059
0.063
0.035
0.039
0.043
0.004
0.008
0.012
0.503 0.117 0.033
3o 43o 0.046 0..