Document
Main Product Characteristics:
VDSS RDS(on)
ID
600V 0.73Ω (typ.)
8A ①
Features and Benefits:
High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance
TO-220
SSF8NP60U
Marking and pin Assignment
Schematic diagram
Description:
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application (adaptor, lighting, charger etc.) and a wide variety of other applications.
Absolute max Rating:
Symbol ID @ TC = 25°C ID @ TC = 100°C IDM
PD @TC = 25°C
VDS VGS EAS IAS TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current ② Power Dissipation ③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=22.5mH Avalanche Current @ L=22.5mH Operating Junction and Storage Temperature Range
Max. 8① 4.9 ① 32 62.5 0.5 600 ± 30 45
2 -55 to +150
Units
A
W W/°C
V V mJ A °C
©Silikron Semiconductor CO.,LTD.
2013.08.12 www.silikron.com
Version : 1.0
page 1 of 8
SSF8NP60U
Thermal Resistance
Symbol RθJC RθJA
Characterizes Junction-to-case ③ Junction-to-ambient (t ≤ 10s) ④
Typ. — —
Max. 2.0 62
Units ℃/W ℃/W
Electrical Characterizes @TA=25℃ unless otherwise specified
Symbol V(BR)DSS
RDS(on)
VGS(th)
IDSS
IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Parameter Drain-to-Source breakdown voltage
Static Drain-to-Source on-resistance
Gate threshold voltage
Drain-to-Source leakage current
Gate-to-Source forward leakage Total gate charge Gate-to-Source charge Gate-to-Drain("Miller") charge Turn-on delay time Rise time Turn-Off delay time Fall time Input capacitance Output capacitance Reverse transfer capacitance
Min.
600 — — — —
2 — — — — — — — — — — — — — — —
Typ. — 0.73 1.54 0.78 1.76 — 2.5 — — — — 12 2.1 5.3 9.8 14 29 14 344 19 3.0
Max. — 0.85 — 1.0 — 4 — 1 50 100
-100 — — — — — — — — — —
Units V Ω Ω V μA nA
nC
Conditions VGS = 0V, ID = 250μA VGS=10V,ID = 1A TJ = 125°C VGS=10V,ID = 2.8A TJ = 125°C VDS = VGS, ID = 250μA TJ = 125°C VDS = 600V,VGS = 0V TJ = 125°C VGS =30V VGS = -30V ID = 4.6A, VDS=480V, VGS = 10V
VGS=10V, VDS =300V, ns
RGEN=25Ω,ID =4.6A
VGS = 0V pF VDS = 100V
ƒ = 1MHz
Source-Drain Ratings and Characteristics
Symbol IS
ISM VSD trr Qrr
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min. —
Typ. —
Max. 8①
— — 32
— 0.83 1.2 — 181 — — 1.0 —
Units A
A V nS μC
Conditions MOSFET symbol showing the integral reverse p-n junction diode. IS=2.8A, VGS=0V TJ = 25°C, IF =4.6A, di/dt = 100A/μs
©Silikron Semiconductor CO.,LTD.
2013.08.12 www.silikron.com
Version : 1.0
page 2 of 8
Test circuits and Waveforms
EAS Test Circuit:
SSF8NP60U
Gate charge test circuit:
Switching Time Test Circuit:
Switching Waveforms:
Notes:
①Calculated continuous current based on maximum allowable junction temperature. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance. ④The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
©Silikron Semiconductor CO.,LTD.
2013.08.12 www.silikron.com
Version : 1.0
page 3 of 8
Typical electrical and thermal characteristics
SSF8NP60U
Figure 1: Typical Output Characteristics
Figure 2. Gate to source cut-off voltage
Figure 3. Drain-to-Source Breakdown Voltage Vs. Case Temperature
Figure 4: Normalized On-Resistance Vs. Case Temperature
©Silikron Semiconductor CO.,LTD.
2013.08.12 www.silikron.com
Version : 1.0
page 4 of 8
Typical electrical and thermal characteristics
SSF8NP60U
Figure 5. Maximum Drain Current Vs. Case Temperature
Figure 6. Typical Capacitance Vs. Drain-to-Source Voltage
Figure7. Drain-to-Source Voltage Vs. Gate-to-Source Voltage
Figure8. Maximum Effective Transient Thermal Impedance, Junction-to-Case
©Silikron Semiconductor CO.,LTD.
2013.08.12 www.silikron.com
Version : 1.0
page 5 of 8
Mechanical Data:
TO220 PACKAGE OUTLINE DIMENSION_GN
SSF8NP60U
Symbol
A A1 A2 b b1 b2 C D D1 D2 E E1 ФP ФP1 e e1 L L1 L2 L3 L4 Q1 Q2 Q3 Q4
Dimension In Millimeters
Min 4.400 1.270 2.240
1.270 0.750 0.480 15.100 8.800 2.730 9.900
-
Nom 4.550 1.300 2.340 1.270 1.370 0.800 0.500 15.400 8.900 2.800 10.000 8.700
Max 4.700 1.330 2.440
1.470 0.850 0.520 15.700 9.000 2.870 10.100
-
3.570
3.600
3.630
1.400
1.500
1.600
2.54BSC 5.08BSC
13.150
13.360
13.570
7.35REF
2.900
3.000
3.100
1.650
1.750
1.850
0.900 50 50 50 10
1.000 70 70 70 30
1.100 90 90 90 50
Dimension In Inches
Min 0.173 0.050 0.088
0.050 0.030 0.019 0.594 0.346 0.107 0.390
-
Nom 0.179 0.051 0.092 0.050 0.054 0.