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SSF8NP60U Dataheets PDF



Part Number SSF8NP60U
Manufacturers SILIKRON
Logo SILIKRON
Description N-Channel MOSFET
Datasheet SSF8NP60U DatasheetSSF8NP60U Datasheet (PDF)

Main Product Characteristics: VDSS RDS(on) ID 600V 0.73Ω (typ.) 8A ① Features and Benefits:  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge  Low gate input resistance TO-220 SSF8NP60U Marking and pin Assignment Schematic diagram Description: It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an .

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Main Product Characteristics: VDSS RDS(on) ID 600V 0.73Ω (typ.) 8A ① Features and Benefits:  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge  Low gate input resistance TO-220 SSF8NP60U Marking and pin Assignment Schematic diagram Description: It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application (adaptor, lighting, charger etc.) and a wide variety of other applications. Absolute max Rating: Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS EAS IAS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current ② Power Dissipation ③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=22.5mH Avalanche Current @ L=22.5mH Operating Junction and Storage Temperature Range Max. 8① 4.9 ① 32 62.5 0.5 600 ± 30 45 2 -55 to +150 Units A W W/°C V V mJ A °C ©Silikron Semiconductor CO.,LTD. 2013.08.12 www.silikron.com Version : 1.0 page 1 of 8 SSF8NP60U Thermal Resistance Symbol RθJC RθJA Characterizes Junction-to-case ③ Junction-to-ambient (t ≤ 10s) ④ Typ. — — Max. 2.0 62 Units ℃/W ℃/W Electrical Characterizes @TA=25℃ unless otherwise specified Symbol V(BR)DSS RDS(on) VGS(th) IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-to-Source breakdown voltage Static Drain-to-Source on-resistance Gate threshold voltage Drain-to-Source leakage current Gate-to-Source forward leakage Total gate charge Gate-to-Source charge Gate-to-Drain("Miller") charge Turn-on delay time Rise time Turn-Off delay time Fall time Input capacitance Output capacitance Reverse transfer capacitance Min. 600 — — — — 2 — — — — — — — — — — — — — — — Typ. — 0.73 1.54 0.78 1.76 — 2.5 — — — — 12 2.1 5.3 9.8 14 29 14 344 19 3.0 Max. — 0.85 — 1.0 — 4 — 1 50 100 -100 — — — — — — — — — — Units V Ω Ω V μA nA nC Conditions VGS = 0V, ID = 250μA VGS=10V,ID = 1A TJ = 125°C VGS=10V,ID = 2.8A TJ = 125°C VDS = VGS, ID = 250μA TJ = 125°C VDS = 600V,VGS = 0V TJ = 125°C VGS =30V VGS = -30V ID = 4.6A, VDS=480V, VGS = 10V VGS=10V, VDS =300V, ns RGEN=25Ω,ID =4.6A VGS = 0V pF VDS = 100V ƒ = 1MHz Source-Drain Ratings and Characteristics Symbol IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. — Typ. — Max. 8① — — 32 — 0.83 1.2 — 181 — — 1.0 — Units A A V nS μC Conditions MOSFET symbol showing the integral reverse p-n junction diode. IS=2.8A, VGS=0V TJ = 25°C, IF =4.6A, di/dt = 100A/μs ©Silikron Semiconductor CO.,LTD. 2013.08.12 www.silikron.com Version : 1.0 page 2 of 8 Test circuits and Waveforms EAS Test Circuit: SSF8NP60U Gate charge test circuit: Switching Time Test Circuit: Switching Waveforms: Notes: ①Calculated continuous current based on maximum allowable junction temperature. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal resistance. ④The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C ©Silikron Semiconductor CO.,LTD. 2013.08.12 www.silikron.com Version : 1.0 page 3 of 8 Typical electrical and thermal characteristics SSF8NP60U Figure 1: Typical Output Characteristics Figure 2. Gate to source cut-off voltage Figure 3. Drain-to-Source Breakdown Voltage Vs. Case Temperature Figure 4: Normalized On-Resistance Vs. Case Temperature ©Silikron Semiconductor CO.,LTD. 2013.08.12 www.silikron.com Version : 1.0 page 4 of 8 Typical electrical and thermal characteristics SSF8NP60U Figure 5. Maximum Drain Current Vs. Case Temperature Figure 6. Typical Capacitance Vs. Drain-to-Source Voltage Figure7. Drain-to-Source Voltage Vs. Gate-to-Source Voltage Figure8. Maximum Effective Transient Thermal Impedance, Junction-to-Case ©Silikron Semiconductor CO.,LTD. 2013.08.12 www.silikron.com Version : 1.0 page 5 of 8 Mechanical Data: TO220 PACKAGE OUTLINE DIMENSION_GN SSF8NP60U Symbol A A1 A2 b b1 b2 C D D1 D2 E E1 ФP ФP1 e e1 L L1 L2 L3 L4 Q1 Q2 Q3 Q4 Dimension In Millimeters Min 4.400 1.270 2.240 1.270 0.750 0.480 15.100 8.800 2.730 9.900 - Nom 4.550 1.300 2.340 1.270 1.370 0.800 0.500 15.400 8.900 2.800 10.000 8.700 Max 4.700 1.330 2.440 1.470 0.850 0.520 15.700 9.000 2.870 10.100 - 3.570 3.600 3.630 1.400 1.500 1.600 2.54BSC 5.08BSC 13.150 13.360 13.570 7.35REF 2.900 3.000 3.100 1.650 1.750 1.850 0.900 50 50 50 10 1.000 70 70 70 30 1.100 90 90 90 50 Dimension In Inches Min 0.173 0.050 0.088 0.050 0.030 0.019 0.594 0.346 0.107 0.390 - Nom 0.179 0.051 0.092 0.050 0.054 0.


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