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MUR1220CTR Dataheets PDF



Part Number MUR1220CTR
Manufacturers Thinki Semiconductor
Logo Thinki Semiconductor
Description 12.0 Ampere Heatsink Dual Common Anode Fast Recovery Rectifiers
Datasheet MUR1220CTR DatasheetMUR1220CTR Datasheet (PDF)

MUR1220CTR thru MUR1260CTR ® MUR1220CTR thru MUR1260CTR Pb Pb Free Plating Product 12.0 Ampere Heatsink Dual Common Anode Fast Recovery Rectifiers Feature Fast switching for high efficiency Low forward voltage drop High current capability Low reverse leakage current High surge current capability Application Automotive Environment(Inverters/Converters) Plating Power Supply,Adaptor,SMPS and UPS Car Audio Amplifiers and Sound Device System Mechanical Data Case:TO-220AB Heatsink Epoxy: UL 94V-.

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MUR1220CTR thru MUR1260CTR ® MUR1220CTR thru MUR1260CTR Pb Pb Free Plating Product 12.0 Ampere Heatsink Dual Common Anode Fast Recovery Rectifiers Feature Fast switching for high efficiency Low forward voltage drop High current capability Low reverse leakage current High surge current capability Application Automotive Environment(Inverters/Converters) Plating Power Supply,Adaptor,SMPS and UPS Car Audio Amplifiers and Sound Device System Mechanical Data Case:TO-220AB Heatsink Epoxy: UL 94V-0 rate flame retardant Terminals: Solderable per MIL-STD-202 method 208 Polarity: As marked on diode body Mounting position: Any Weight: 2.2 gram approximately TO-220AB .419(10.66) .387(9.85) .139(3.55) MIN Unit : inch (mm) .196(5.00) .163(4.16) .054(1.39) .045(1.15) .269(6.85) .226(5.75) .624(15.87) .548(13.93) .177(4.5)MAX .50(12.7)MIN .038(0.96) .019(0.50) .1(2.54) .1(2.54) .025(0.65)MAX Case Positive Common Cathode Suffix "CT" Case Negative Common Anode Suffix "CTR" Case Doubler Tandem Polarity Suffix "CTD" MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25oC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current TC=100oC MUR1220CT SYMBOL MUR1220CTR MUR1220CTD VRRM 200 VRMS 140 VDC 200 IF(AV) MUR1240CT MUR1240CTR MUR1240CTD 400 280 400 12.0 MUR1260CT MUR1260CTR UNIT MUR1260CTD 600 V 420 V 600 V A Peak Forward Surge Current, 8.3ms single Half sine-wave superimposed on rated load (JEDEC method) IFSM 100 A Maximum Instantaneous Forward Voltage @ 6.0 A Maximum DC Reverse Current @TJ=25oC At Rated DC Blocking Voltage @TJ=125oC Maximum Reverse Recovery Time (Note 1) Typical junction Capacitance (Note 2) Typical Thermal Resistance (Note 3) Operating Junction and Storage Temperature Range VF IR Trr CJ R JC TJ, TSTG 0.98 1.3 10.0 250 35 65 2.2 -55 to +150 1.7 V uA uA nS pF oCW oC NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A. (2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC. (3) Thermal Resistance junction to case. Page 1/2 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ MUR1220CTR thru MUR1260CTR ® AVERAGE FORWARD RECTIFIED CURRENT, AMPERES IINSTANTANEOUS FORWARD CURRENT, AMPERES FIG.1 - FORWARD CURRENT DERATING CURVE 12 10 7 5 2 60 Hz Resistive or Inductive load 0 0 50 100 CASE TEMPERATURE, oC 150 FIG.3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 10 MUR1220CTR MUR1240CTR 6 MUR1260CTR TJ=25oC PULSE WIDTH=300uS 1% DUTY CYCLE 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 INSTANTANEOUS FORWARD VOLTAGE, VOLTS INSTANTANEOUS REVERSE CURRENT, MICROAMPERES PEAK FORWARD SURGE CURRENT, AMPERES FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 100 Pulse Width 8.3ms Single Half-Sire-Wave (JEDEC Method) 80 60 40 20 0 1 10 100 NUMBER OF CYCLES AT 60Hz FIG.4 - TYPICAL REVERSE CHARACTERISTICS 1000 TJ=125oC 100 10 TJ=25oC 1 0.1 0 20 40 60 80 100 PERCENT OF RATED PEAK REVERSE VOLTAGE,% FIG.5 - TYPICAL JUNCTION CAPACITANCE 1000 TJ = 25oC f = 1.0 MHZ Vsig = 50mVp-p 100 JUNCTION CAPACITANCE, pF 10 0.1 1.0 4.0 10 REVERSE VOLTAGE, VOLTS 100 © 2006 Thinki Semiconductor Co.,Ltd. Page 2/2 http://www.thinkisemi.com/ .


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