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AP6980GN2-HF Dataheets PDF



Part Number AP6980GN2-HF
Manufacturers Advanced Power Electronics
Logo Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet AP6980GN2-HF DatasheetAP6980GN2-HF Datasheet (PDF)

Advanced Power Electronics Corp. AP6980GN2-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Small Size & Lower Profile ▼ Halogen Free & RoHS Compliant Product G Description AP6980 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. D BVDSS RD.

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Advanced Power Electronics Corp. AP6980GN2-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Small Size & Lower Profile ▼ Halogen Free & RoHS Compliant Product G Description AP6980 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. D BVDSS RDS(ON) ID 30V 14mΩ 10.3A S D D G Top view D D S D D D S S DFN 2x2 D D G Absolute Maximum Ratings@Tj=25oC. (unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ Drain-Source Voltage Gate-Source Voltage Drain Current3, @ VGS=10V Drain Current3, @ VGS=10V Pulsed Drain Current1 Total Power Dissipation3 30 +20 10.3 8.2 25 2.4 V V A A A W TSTG TJ Storage Temperature Range Operating Junction Temperature Range -55 to 150 -55 to 150 ℃ ℃ Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient3 Data and specifications subject to change without notice Value 52 Unit ℃/W 1 201501292 AP6980GN2-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VGS=0V, ID=250uA VGS=10V, ID=8A VGS=4.5V, ID=5A VDS=VGS, ID=250uA VDS=10V, ID=8A VDS=24V, VGS=0V VGS=+20V, VDS=0V ID=8A VDS=15V VGS=4.5V VDS=15V ID=1A RG=3.3Ω VGS=10V VGS=0V .VDS=15V f=1.0MHz f=1.0MHz 30 - - V - 11.2 14 mΩ - 18.3 24 mΩ 1 1.7 3 V - 16 - S - - 10 uA - - +100 nA - 9.5 15.2 nC - 3.5 - nC - 4 - nC - 9 - ns - 5 - ns - 19 - ns - 4.5 - ns - 1100 1760 pF - 130 - pF - 105 - pF - 1.2 2.4 Ω Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage2 Reverse Recovery Time Reverse Recovery Charge Test Conditions IS=2A, VGS=0V IS=8A, VGS=0V, dI/dt=100A/µs Min. Typ. Max. Units - - 1.2 V - 17 - ns - 10 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 2oz copper pad of FR4 board, t < 10s ; 165oC/W when mounted on min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP6980GN2-HF ID , Drain Current (A) ID , Drain Current (A) 40 T A = 25 o C 30 20 10V 7.0V 6.0V 5.0V V G = 4.0V 40 30 20 T A = 150 o C 10V 7.0V 6.0V 5.0V V G = 4.0V 10 10 0 012345 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 24 ID=5A T A =25 ℃ 20 0 012345 V DS , Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics 2.0 ID=8A V G = 10 V 1.6 Normalized RDS(ON) RDS(ON) (mΩ) .16 1.2 12 0.8 IS(A) 8 2 4 6 8 10 V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage 8 6 4 T j =150 o C 2 T j =25 o C 0 0 0.2 0.4 0.6 0.8 1 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 Normalized VGS(th) 0.4 -50 0 50 100 T j , Junction Temperature ( o C) Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.0 I D =250uA 1.6 150 1.2 0.8 0.4 0.0 -50 0 50 100 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 150 3 VGS , Gate to Source Voltage (V) AP6980GN2-HF 10 I D = 8A V DS =15V 8 6 4 2 0 0 4 8 12 16 20 Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics C (pF) f=1.0MHz 1600 1200 C iss 800 400 C oss C rss 0 1 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Fig 8. Typical Capacitance Characteristics ID (A) 100 Operation in this 10 area limited by RDS(ON) 100us 1ms 1 0.1 T =25 o C 10ms 100ms 1s DC 0.01 0.01 0.1 1 10 V DS , Drain-to-Source Voltage (V) 100 Fig 9. Maximum Safe Operating Area Normalized Thermal Response (R thja) 1 Duty factor=0.5 0.2 0.1 0.1 0.05 . 0.02 0.01 0.01 PDM t T Duty factor = t/T Single Pulse 0.001 0.0001 0.001 0.01 0.1 1 10 t , Pulse Width (s) 100 1000 Fig 10. Effective Transient Thermal Impedance ID , Drain Current (A) 40 V DS =5V 30 20 T j =150 o C 10 T j =25 o C T j = -40 o C 0 012345 V GS , Gate-to-Source Voltage (V) Fig 11. Tra.


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