Document
Advanced Power Electronics Corp.
AP6980GN2-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement ▼ Small Size & Lower Profile ▼ Halogen Free & RoHS Compliant Product
G
Description
AP6980 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications.
D BVDSS RDS(ON) ID
30V 14mΩ 10.3A
S
D D G
Top view
D D S
D
D
D
S S
DFN 2x2 D D G
Absolute Maximum Ratings@Tj=25oC. (unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃
Drain-Source Voltage
Gate-Source Voltage Drain Current3, @ VGS=10V Drain Current3, @ VGS=10V Pulsed Drain Current1 Total Power Dissipation3
30 +20 10.3 8.2 25 2.4
V V A A A W
TSTG TJ
Storage Temperature Range Operating Junction Temperature Range
-55 to 150 -55 to 150
℃ ℃
Thermal Data
Symbol Rthj-a
Parameter Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value 52
Unit ℃/W
1 201501292
AP6980GN2-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS RDS(ON)
VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg
Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2
Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
VGS=0V, ID=250uA
VGS=10V, ID=8A
VGS=4.5V, ID=5A
VDS=VGS, ID=250uA VDS=10V, ID=8A VDS=24V, VGS=0V VGS=+20V, VDS=0V ID=8A VDS=15V VGS=4.5V VDS=15V ID=1A RG=3.3Ω VGS=10V VGS=0V
.VDS=15V
f=1.0MHz f=1.0MHz
30 - - V
- 11.2 14 mΩ
- 18.3 24 mΩ
1 1.7 3 V
- 16 -
S
- - 10 uA
- - +100 nA
- 9.5 15.2 nC
- 3.5 - nC
- 4 - nC
- 9 - ns
- 5 - ns
- 19 - ns
- 4.5 - ns
- 1100 1760 pF
- 130 - pF - 105 - pF - 1.2 2.4 Ω
Source-Drain Diode
Symbol VSD trr Qrr
Parameter Forward On Voltage2 Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
IS=2A, VGS=0V IS=8A, VGS=0V, dI/dt=100A/µs
Min. Typ. Max. Units - - 1.2 V - 17 - ns - 10 - nC
Notes:
1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 2oz copper pad of FR4 board, t < 10s ; 165oC/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.
2
AP6980GN2-HF
ID , Drain Current (A)
ID , Drain Current (A)
40
T A = 25 o C
30
20
10V 7.0V 6.0V 5.0V V G = 4.0V
40 30 20
T A = 150 o C
10V 7.0V 6.0V 5.0V V G = 4.0V
10 10
0 012345
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
24
ID=5A T A =25 ℃
20
0 012345
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.0
ID=8A V G = 10 V
1.6
Normalized RDS(ON)
RDS(ON) (mΩ)
.16 1.2
12 0.8
IS(A)
8 2 4 6 8 10
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
8
6
4
T j =150 o C
2
T j =25 o C
0 0 0.2 0.4 0.6 0.8 1 1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of Reverse Diode
1.4
Normalized VGS(th)
0.4 -50
0
50 100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance v.s. Junction Temperature
2.0
I D =250uA
1.6
150
1.2
0.8
0.4
0.0 -50
0
50 100
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s. Junction Temperature
150
3
VGS , Gate to Source Voltage (V)
AP6980GN2-HF
10
I D = 8A V DS =15V
8
6
4
2
0 0 4 8 12 16 20
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
C (pF)
f=1.0MHz
1600
1200
C iss
800
400
C oss C rss
0 1 5 9 13 17 21 25 29
V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
ID (A)
100
Operation in this
10 area limited by RDS(ON)
100us 1ms
1
0.1
T =25 o C
10ms
100ms
1s DC
0.01 0.01
0.1 1 10
V DS , Drain-to-Source Voltage (V)
100
Fig 9. Maximum Safe Operating Area
Normalized Thermal Response (R thja)
1
Duty factor=0.5
0.2 0.1 0.1
0.05
. 0.02
0.01 0.01
PDM t T
Duty factor = t/T
Single Pulse
0.001 0.0001
0.001
0.01 0.1 1 10
t , Pulse Width (s)
100 1000
Fig 10. Effective Transient Thermal Impedance
ID , Drain Current (A)
40
V DS =5V
30
20
T j =150 o C
10
T j =25 o C T j = -40 o C
0 012345
V GS , Gate-to-Source Voltage (V)
Fig 11. Tra.