AP6982GM

Advanced Power Electronics Corp. AP6982GM Pb Free Plating Product DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-resistance ▼ Fast Switching Characteristic ▼ Surface Mount Package D2 D2 D2 D1 D2 D1 D1 D1 Description SO-8 SO-8 G2 G2 S2 G1 S2 S1S1 G1 The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. CH-1 CH-2 BVDSS RDS(ON) ID BVDSS RDS(ON) ID D1 G1 G2 S1 30V 18mΩ 8.5A 30V 26mΩ 7.3A D2 S2 Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient3 Rating CH-1 CH2 30 30 ±25 ±25 8.5 7.3 6.8 5.8 30 30 2.0 0.016 -55 to 150 -55 to 150 Units V V A A A W W/℃ ℃ ℃ Max. Value 62.5 Unit ℃/W Data and specifications subject to change without notice 201220042 AP6982GM CH-1 Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS ΔBVDSS/ΔTj RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Drain-Source Breakdown Voltage VGS=0V, ID=250uA Breakdown Voltage Temperature Coefficient Reference to 25℃, ID...