N-Channel Enhancement Mode MOSFET
T echcode®
N-Channel
Enhancement
Mode
MOSFET
DESCRIPTION
The TDM3426 uses advanced trench technology...
Description
T echcode®
N-Channel
Enhancement
Mode
MOSFET
DESCRIPTION
The TDM3426 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
GENERAL FEATURES
RDS(ON) < 9.8mΩ @ VGS=4.5V
RDS(ON) < 7.2mΩ @ VGS=10V High Power and current handing capability Lead free product is acquired Surface Mount Package
Application
PWM applications Load switch Power management
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Drain‐Source Voltage
VDS
Gate‐Source Voltage Drain Current @ Continuous(Note 2)
VGS ID(25℃) ID(100℃)
Drain Current @ Current‐Pulsed (Note 1) Maximum Power Dissipation (TA=25℃)
IDM PD
Operating Junction and Storage Temperature Range
TJ,TSTG
THERMAL CHARACTERISTICS
Thermal Resistance,Junction‐to‐Ambient (Note 2)
RθJA
DATASHEET
TDM3426
Limit 30 +20 15 12 60 3.5 ‐55 To 150
35
Unit V V A A A W ℃
℃/W
November 18, 2014 Techcode Semiconductor Limited www.techcodesemi.com 1
T echcode®
N-Channel
Enhancement
Mode
MOSFET
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
DATASHEET
TDM3426
Parameter
Symbol Condition
Min
OFF CHARACTERISTICS
Drain‐Source Breakdown Voltage
BVDSS VGS...
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