AP4501AGEM-HF

Advanced Power Electronics Corp. AP4501AGEM-HF Halogen-Free Product N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast Switching Performance D2 D2 D1 D1 ▼ RoHS Compliant & Halogen-Free SO-8 G2 S2 G1 S1 Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. N-CH P-CH G1 BVDSS RDS(ON) ID BVDSS RDS(ON) ID D1 1 G2 S1 30V 20mΩ 8A -30V 60mΩ -4.6A D2 S2 Absolute Maximum Ratings@Tj=25o.C(unless otherwise specified) Symbol Parameter Rating Units N-channel P-channel VDS Drain-Source Voltage 30 -30 V VGS ID@TA=25℃ ID@TA=70℃ IDM Gate-Source Voltage Drain Current3 , VGS @ 10V Drain Current3 , VGS @ 10V Pulsed Drain Current1 +20 +20 8.0 -4.6 6.3 -3.7 20 -20 V A A A PD@TA=25℃ TSTG TJ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range 2 -55 to 150 -55 to 150 W ℃ ℃ Thermal Data Symbol Parameter Rthj-a Maximum Thermal Resistance, Junction-ambient3 Data and specifications subject to change without notice Value 62.5 Unit ℃/W 1 201409263 AP4501AGEM-HF N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS RDS(ON) VGS(th...