N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics Corp.
AP4501AGEY-HF
Halogen-Free Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Si...
Description
Advanced Power Electronics Corp.
AP4501AGEY-HF
Halogen-Free Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast Switching Performance
D2
D2 D1
D1
▼ RoHS Compliant & Halogen-Free
2928-8
N-CH
G2
S2 G1 S1
P-CH
Description
AP4501A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications.
G1
BVDSS RDS(ON) ID BVDSS RDS(ON) ID
D1
1 G2
The 2928-8 J-lead package provides good on-resistance performance and space saving like TSOP-6.
S1
30V 20mΩ 6.5A -30V 45mΩ -4.5A
D2
S2
Absolute Maximum Ratings@Tj=25oC. (unless otherwise specified)
Symbol
Parameter
Rating
Units
N-channel P-channel
VDS Drain-Source Voltage
30 -30
V
VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ
Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
+20 +20 6.5 -4.5 5.2 -3.6 30 -20
1.38 -55 to 150 -55 to 150
V A A A W ℃ ℃
Thermal Data
Symbol
Parameter
Rthj-a
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value 90
Unit ℃/W
1 201410023AP
AP4501AGEY-HF
N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
...
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